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Hybrid dc circuit breakers (HCBs) usually require a large number of insulated-gate bipolar transistors (IGBTs) with high turn- off capability for series and parallel connections. This requirement entails excessive cost. Compared with IGBTs, integrated gate-commutated thyristors (IGCTs) are another kind of fully controlled power device with high surge current and voltage capability but are low cost. However, the weak turn- off capability of IGCTs hinders their application to high-powered HCBs. On the basis of the complementary advantages of IGBTs and IGCTs, this paper proposes a mixture solid-state switch (MSS) for HCBs that uses the switching action of several IGBTs to create a low-current condition that favors the turning off of large-scale series-connected IGCTs. The MSS topology can significantly reduce cost while maintaining the excellent performance of traditional solid-state switches. This study also introduces two different turn- off modes for MSS, namely, single oscillation and multiple oscillations. Finally, 25 kV/20 kA prototypes in both modes are developed to verify the effectiveness of the MSS topology.

Different from the continuous-switching behavior of series power electronic devices in converters, the single-switching attribute of dc circuit breakers (DCBs) provides opportunities to integrate metal oxide varistors (MOVs), balancing circuits, and series power devices. This paper proposes a modular design methodology based on discrete MOVs of a DCB with series power electronic devices. The modular dc circuit breaker (MDCB) topology and voltage balance issues, the steep front effect and solution, and the design method are proposed and analyzed in this paper. Compared with the traditional DCB, the MDCB has a self-balancing ability, thereby removing the voltage-balancing circuit and reducing the number of series modules. The standard designed cell can be operated as an independent DCB or compose a high-voltage DCB in series flexibly, which decreases the difficulty of design and commission. Finally, a series experimental platform based on an insulated-gate commutated thyristor, an insulated-gate bipolar transistor, and an injection-enhanced gate transistor is built to verify the correctness and effectiveness of the proposed design methodology.

As power semiconductor devices are the key components of hybrid DC circuit breakers (HCBs), how to select suitable devices is critical for the whole HCB design. First, this paper compared the general characteristics of press pack insulated gate bipolar transistor (IGBT), injection-enhanced gate transistor (IEGT), and integrated gate commutated thyristor (IGCT). Then working conditions of devices were analyzed from the perspective of HCBs. According to these, vital features of devices including maximum turn-off current, on-state voltage, conduction ability, and robustness of power semiconductor devices were carefully analyzed and compared. Related experiments were implemented to compare maximum turn-off capability, and the 4.5 kV/3 kA IGBT/IEGT was able to turn off 19 and 22 kA respectively after 5-ms current conduction. Analysis and experiments indicated that IGCT was suitable for natural commutation low-voltage and low-current hybrid circuit breakers, due to its low on-state voltage and huge surge current conduction ability. Comparatively, IGBT and IEGT were more suitable for very high current interruption, and IEGT was the superior selection among available commercial devices. However, the interference should be considered in applications.