1. Temperature Dependence and Postirradiation Annealing Response of the 1/f Noise of 4H-SiC MOSFETs.
- Author
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Zhang, Cher Xuan, Shen, Xiao, Zhang, En Xia, Fleetwood, Daniel M., Schrimpf, Ronald D., Francis, Sarah Ashley, Roy, Tania, Dhar, Sarit, Ryu, Sei-Hyung, and Pantelides, Sokrates T.
- Subjects
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SILICON carbide , *METAL oxide semiconductor field-effect transistors , *OXIDES , *BAND gaps , *TEMPERATURE effect , *ANNEALING of semiconductors - Abstract
The temperature dependence of the low-frequency noise of 4H-silicon carbide (SiC) MOSFETs with nitrided oxides is reported over the temperature range 85–510 K. The 1/f noise decreases significantly with increasing measurement temperature. This decrease in noise results primarily from a decrease in the density of interface traps at increasing temperatures. The 1/f noise is also characterized after total ionizing dose irradiation and postirradiation annealing. No significant change in the 1/f noise is observed after the devices are irradiated to 1 Mrad (SiO2) and then annealed under bias at elevated temperature. These results show that the 1/f noise in 4H-SiC MOSFETs is dominated by the interaction of channel carriers with slow interface traps at temperatures <360~K and with border traps >\rm\!360~K. This result contrasts with most experience with Si/SiO2-based MOSFETs, and results from the wider bandgap and greater density of slow interface traps in SiC/SiO2-based MOSFETs than in Si/SiO2-based MOSFETs. [ABSTRACT FROM AUTHOR]
- Published
- 2013
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