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We theoretically explore dwell time for electrons in a semiconductor microstructure, which is constructed on the surface of the InAs/Al x In1- x As heterostructure by patterning a ferromagnetic (FM) stripe and a Schottky-metal (SM) stripe in a parallel configuration. Dwell time is found to be dependent on electron spins. Spin-polarized dwell time can be controlled by changing an applied voltage to SM stripe. Thus, electron spins can be separated in time dimension, and such a semiconductor microstructure can be used as an electrically tunable temporal spin splitter for spintronics device applications.

Based on a magnetically confined GaAs/Al x Ga1– x As microstructure modulated by spin-orbit coupling (SOC), we propose a controllable electron-spin filter for spintronics applications. This device operates due to both Zeeman interaction and Rashba or Dresselhaus SOC. Its spin polarization can be tuned by changing interfacial confining electric field or engineering strain.

The magnetically confined semiconductor heterostructure (MCSH) is often used as the momentum filter due to an essentially 2-D process for the electronic tunneling. Taking a typical MCSH into account, we theoretically investigate how to manipulate such momentum filters by the $\delta $ -doping technique. The momentum-filtering efficiency can be tuned because of the $\delta $ -doping dependence of the electron transmission. The involved MCSH can be employed as a controllable momentum filter.