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A comprehensive investigation of long-term environmental stability and performance of flexible hybrid resistive random access memory (RRAM) devices with PVK:MoS2/TiO2 bilayer is presented. These devices were systematically characterized for their switching behavior for a very long duration of 20 months, and it was found that devices were able to maintain their switching behavior with maximum average ${V}_{\text {SET}}$ of ~1.5 V and lowest average ${V}_{\text {RESET}}$ of ~ −1.8 V, indicating high shelf life and low-voltage operation. Excellent retention of 104s was exhibited by devices even after being in ambient environment for 20 months. Although the devices exhibited almost unchanged ${V}_{\text {SET}}$ and ${V}_{\text {RESET}}$ values upon variation of humidity exposure (RH ~42% to ~99%), an increase in the magnitude of both was observed upon temperature variation from room temperature (RT) to 100 °C. A typical decay in ${I}_{\text {ON}}/{I}_{\text {OFF}}$ by more than an order of magnitude (from ~103) was observed upon aging and application of temperature; however, an increase in the same was observed upon exposure to high humidity on the order of 102–103. Our investigation indicates that (PVK:MoS2/TiO2) hybrid switching layer can be suitable for environmentally stable nonvolatile memory devices for flexible electronics.

High-performance flexible resistive random access memory (RRAM) devices were demonstrated by engineering the switching layer with PVK:MoS2 composite and TiO2 bilayer. These flexible RRAM devices exhibited excellent switching with low SET (1.2 V) and RESET (−1.5 V) voltages, a high repeatability of 1000 cycles, and an excellent retention time of 5000 s with an ON/OFF current ratio more than 102 at a read voltage of 0.2 V, significantly better than neat PVK/TiO2 devices. Moreover, devices with PVK:MoS2/TiO2 bilayer exhibited high stability upon bending with radii up to 7 mm for 100 cycles. Our results indicate that PVK:MoS2/TiO2 composite bilayer can be a promising switching layer candidate for high-performance flexible RRAM devices.