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Your search keyword '"Hole concentration"' showing total 2 results
Start Over Descriptor "Hole concentration" Journal ieee transactions on electron devices
2 results on '"Hole concentration"'

1. Nitride-Based LEDS With p-InGaN Capping Layer.

Author

Chang, S. J., Chen, C. H., Chang, P. C., Su, Y. K., Jhou, Y. D., Hung, H., Wang, S. M., and Huang, B. R.

Subjects
*NITRIDES, *ELECTROLUMINESCENCE, *LIGHT emitting diodes, *DIODES, *TEMPERATURE, *MAGNESIUM
Abstract

Nitride-bass light-emitting diodes (LEDs) with Mg-doped In[sub0.23]Ga[sub0.77]N capping layers were successfully fabricated. Compared to Mg-doped GaN layers, it was found that we could achieve a much larger hole concentration from Mg-doped In[sub0.23]Ga[sub0.77]N layers. It was also found that we could reduce the 20 mA operation voltage from 3.78 to 3.37 V by introducing a 5-nm-thick In[sub0.23]Ga[sub0.77]N layer on top of the p-GaN layer. Furthermore, it was found that output intensity of LEDs with In[sub0.23]Ga[sub0.77]N capping layer was much larger, particularly at elevated temperatures. [ABSTRACT FROM AUTHOR]

Published
2003
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2. Analytical model of drain current of Si/SiGe heterostructure p-channel MOSFETs for circuit simulation

Author

B. Bindu, Amitava DasGupta, and Nandita DasGupta

Subjects
Semiconducting silicon compounds, Materials science, Heterojunction field effect transistor, Polynomial approximation, Analytical model, Electronic circuit simulation, Semiconductor device models, Circuit simulation, P channel, MOSFET, Interfaces (materials), Electrical and Electronic Engineering, MOSFET devices, Drain current, Surface deformation, business.industry, Electrical engineering, Heterojunction, Computer simulation, Electronic, Optical and Magnetic Materials, Hole concentration, Semiconductor, Heterojunctions, Optoelectronics, Carrier concentration, business
Abstract

An analytical model of drain current of Si/SiGe heterostructure p-channel MOSFETs is presented. A simple polynomial approximation is used to model the sheet carrier concentration (p/sub s//sup H/) in the two-dimensional hole gas at the Si/SiGe interface. The interdependence of p/sub s//sup H/ and the hole concentration at the Si/SiO/sub 2/ interface (p/sub s//sup S/) is taken into account in the model, which considers current flow at both the Si/SiGe and the Si/SiO/sub 2/ interfaces. This model is applicable to compressively strained SiGe buried-channel heterostructure PMOSFETs as well as tensile-strained surface-channel PMOSFETs. The model has been implemented in SABER, a circuit simulator. The results from the model show an excellent agreement with the experimental data.

Published
2006
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