1. Measurements of Silicon Photomultipliers Responsivity in Continuous Wave Regime
- Author
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Massimo Mazzillo, Gabriele Adamo, Giuseppe Costantino Giaconia, Antonino Parisi, Salvatore Stivala, Alessandro Busacca, Giorgio Fallica, Delfo Sanfilippo, D. Agrò, Adamo, G, Agro', D, Stivala, S, Parisi, A, Giaconia, GC, Busacca, A, Mazzillo, M, Sanfilippo, D, and Fallica, G
- Subjects
Silicon photonics ,Materials science ,Silicon ,Physics::Instrumentation and Detectors ,business.industry ,Hybrid silicon laser ,chemistry.chemical_element ,Settore ING-INF/02 - Campi Elettromagnetici ,Optical power ,Substrate (electronics) ,Settore ING-INF/01 - Elettronica ,Electronic, Optical and Magnetic Materials ,Responsivity ,Optics ,Silicon photomultiplier ,chemistry ,Optoelectronics ,Continuous wave ,Avalanche photodiode (APD), photodetector, responsivity, silicon photomultiplier (SiPM), single-photon avalanche diode (SPAD) ,Electrical and Electronic Engineering ,business - Abstract
We report on the electrical and optical characterization, in continuous wave regime, of a novel class of silicon photomultipliers fabricated in standard planar technology on a silicon p-type substrate. Responsivity measurements, performed with an incident optical power down to tenths of picowatts, at different reverse bias voltages and on a broad (340–820 nm) spectrum, will be shown and discussed. The device temperature was monitored, allowing us to give a physical interpretation of the measurements. The obtained results demonstrate that such novel silicon photomultipliers are suitable as sensitive power meters for low photon fluxes.
- Published
- 2013
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