1. Temperature-Dependent Thermal Capacitance Characterization for SOI-MOSFETs.
- Author
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Gonzalez, Benito, Aja, Beatriz, Artal, Eduardo, Lazaro, Antonio, and Nunez, Antonio
- Subjects
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ELECTRIC capacity , *THERMAL resistance , *THERMAL conductivity , *LOGIC circuits , *METAL semiconductor field-effect transistors - Abstract
Thermal capacitances are required to describe the fast dynamic thermal behavior in the silicon-on-insulator (SOI) devices. This article presents a physical model based on the ac technique, together with the characteristic thermal frequency determination through the frequency response of the output conductance, for calculating the thermal capacitance of single-finger and multi-finger SOI-MOSFETs. The model accounts for the total gate width and substrate temperature, making evident the augmented thermal coupling when multi-fingers are used. The thermal capacitances and the corresponding time constants, extracted from a variety of gate widths and number of fingers, are correctly predicted up to a substrate temperature of 150 °C. [ABSTRACT FROM AUTHOR]
- Published
- 2019
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