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Your search keyword '"Aluminum -- Atomic properties"' showing total 2 results
Start Over Descriptor "Aluminum -- Atomic properties" Journal ieee transactions on electron devices
2 results on '"Aluminum -- Atomic properties"'

1. Influence of lateral spreading of implanted aluminum ions and implantation-induced defects on forward current-voltage characteristics of 4H-SiC junction barrier Schottky diodes

Author

Mochizuki, Kazuhiro, Kameshiro, Norifumi, Onose, Hidekatsu, and Yokoyama, Natsuki

Subjects
Aluminum -- Atomic properties, Aluminum -- Electric properties, Voltage -- Measurement, Diodes, Schottky-barrier -- Evaluation, Silicon carbide -- Electric properties, Business, Electronics, Electronics and electrical industries
Abstract

Several experimental and computational studies are conducted to determine the forward current density ([J.sub.F])-forward voltage ([V.sub.F]) characteristics of 4H-silicon junction barrier Schottky (JBS) diodes. These characteristics are shown to be highly affected by the lateral spreading of the implanted aluminum ions and implantation-induced defects.

Published
2009

2. Effective work function control with aluminum postdoping in the Ni silicide/HfSiON systems

Author

Tsuchiya, Yoshinori, Yoshiki, Masahiko, Koga, Junji, Nishiyama, Akira, Zaima, Shigeaki, Koyama, Masato, and Ogawa, Masaki

Subjects
Aluminum -- Atomic properties, Metal oxide semiconductors -- Analysis, Nickel -- Electric properties, Semiconductor doping -- Analysis, Business, Electronics, Electronics and electrical industries
Abstract

Aluminum ion doping to the Ni fully silicided/HfSiON gate stack is used to demonstrate a simplified method of effective work function control for n-channel metal-oxide-semiconductor. The formation of interfacial [Al.sub.2] [O.sub.3] layer at the Ni-FUSI/Si[O.sub.2] interface gives rise to opposite effective work function that has little influence on the effective work function value on the Ni fully silicided/HfSiON interface.

Published
2008

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