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The corrugated p-base (CB) structure has been acknowledged as an effective method to improve the maximum controllable current (MCC) of asymmetric integrated gate-commutated thyristor (IGCT), but never clarified in symmetrical devices such as reverse blocking IGCT (RB-IGCT). This study focuses on the influence of the CB structure on the MCC and the failure mechanism of RB-IGCT. First of all, by employing the CB structure in the RB-IGCT samples, it is verified that the CB structure can improve MCC of the symmetrical devices by more than 50%, no matter under high or low dc-link voltages. Moreover, regarding the scenario under the high dc-link voltage, the effect of the CB structure on the dynamic avalanche is analyzed via simulation, and the improvement of MCC and the positive trend of MCC upon temperature are further clarified. As to the scenario under the low dc-link voltage, distinct failure phenomenon and negative temperature dependence of MCC are observed evidentially on the symmetric devices with CB structure. To explain these failure characteristics that are conflicting with the well-acknowledged dynamic avalanche failure, a novel failure mode named cathode retrigger failure is proposed in this study. It is believed that this study not only deciphers the fundamental mechanisms of the CB structure in RB-IGCT, but also provides practical strategy to optimize the symmetric IGCT devices. [ABSTRACT FROM AUTHOR]

DC circuit breakers (DCBs) are crucial components in dc power systems. The ultralow operating frequency of the DCBs enables the use of gate-commutated thyristors (GCTs) in the DCBs. This paper proposed a 6-in dual-gate ring commutated thyristor (DGRCT) for the DCB applications. The wafer and package designs of the DGRCT are first presented and discussed, analyzing the principles of the current commutation in the DGRCTs. Subsequently, a DGRCT prototype is fabricated, and experiments are conducted to measure the inductance along the current commutation loop (CCL) of the prototype DGRCT. Finally, a large current interruption experiment is conducted. The results show that the prototype DGRCT reduced the parasitic inductance within the CCL by at least 20% compared to conventional GCTs with single-gate ring design. The maximum current interruption capacity of the prototype DGRCT is no less than 12 kA at T = 300 K, which approaches the fault current interruption requirement in DCB applications for both transmission and distribution levels of dc power systems. [ABSTRACT FROM AUTHOR]