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InAs–AlSb high-electron mobility transistors stressed with hot carriers may exhibit shifts in the peak transconductance toward more negative gate-voltages. The devices are most degradation prone in operating conditions with high longitudinal (in the direction of IDS) electric fields in the channel. Room-temperature annealing, gate current, and channel-mobility measurements suggest the presence of a metastable defect in the top AlSb layer. Device simulations and first-principles quantum–mechanical calculations are used to investigate the physical nature of the defects responsible for degradation. Metastable configurations of substitutional and interstitial oxygen have charge states and transition energies consistent with the degradation trends. [ABSTRACT FROM PUBLISHER]

We report the experimental data, quantum-mechanical calculations, and engineering-level modeling that provide insight into the atomic-scale processes that underlie the hot-electron degradation of AlGaN/GaN high-electron-mobility transistors during electrical stress at moderate drain bias. There is relatively large degradation (up to 20%) of the peak transconductance ( gm ) in the semi-ON state, along with a small shift of the threshold voltage ( VT ). The VT shift and gm degradation increase with temperature. A model of the degradation is presented, based on the hot-carrier-induced defect generation. The model considers carrier energy distributions for different temperatures obtained using an ensemble Monte Carlo (EMC) approach. The Ensemble Monte-Carlo results show that the concentration of energetic carriers is maximum at the end of the gate on the gate–drain access side in the semi-ON state of operation. The degradation is directly related to the number of carriers with sufficient energy to generate defects, and the carrier energy distribution depends strongly on the device temperature. The first-principles density functional theory calculations and the analysis suggest that the dehydrogenation of substitutional iron and its complexes is the dominant cause of the observed degradation in these devices. [ABSTRACT FROM AUTHOR]

Monte Carlo analysis of hot-electron degradation in AlGaN/GaN high-electron mobility transistors shows that, for gate voltages corresponding to semi-ON bias conditions, the average electron energy has a spatial peak with \langleEAVE\rangle\sim1.5~\rm eV . The peak is located at the edge of the gate. At this location, the carrier versus energy distribution has a large tail extending over 3 eV. When transferred to the lattice, this energy can cause defect dehydrogenation and device degradation. These results are consistent with the experimental data indicating maximum degradation in the semi-ON bias condition. [ABSTRACT FROM AUTHOR]