1. Very High Carrier Mobility for High-Performance CMOS on Si(110) surface
- Author
-
Masashi Yamamoto, Shigetoshi Sugawa, K. Nii, Hiroshi Akahori, Philippe Gaubert, Tatsufumi Hamada, M. Hirayama, Katsuyoshi Endo, Tadahiro Ohmi, Kenta Arima, and Akinobu Teramoto
- Subjects
flicker ,Electron mobility ,noise ,Materials science ,Silicon ,chemistry.chemical_element ,cleaning ,Surface finish ,MOSFET ,Surface roughness ,Flicker noise ,Electrical and Electronic Engineering ,roughness ,business.industry ,CMOS ,Electrical engineering ,Channel ,mobility ,surface orientation ,Electronic, Optical and Magnetic Materials ,chemistry ,Optoelectronics ,business ,Order of magnitude - Abstract
In this paper, we demonstrate CMOS characteristics on a Si(110) surface using surface flattening processes and radical oxidation. A Si(110) surface is easily roughened by OH- ions in the cleaning solution compared with a Si(100) surface. A flat Si(110) surface is realized by the combination of flattening processes, which include a high-temperature wet oxidation, a radical oxidation, and a five-step room-temperature cleaning as a pregate-oxidation cleaning, which does not employ an alkali solution. On the flat surface, the current drivability of a p-channel MOSFET on a Si(110) surface is three times larger than that on a Si(100) surface, and the current drivability of an n-channel MOSFET on a Si(100) surface can be improved compared with that without the flattening processes and alkali-free cleaning. The 1/f noise of the n-channel MOSFET and p-channel MOSFET on a flattened Si(110) surface is one order of magnitude less than that of a conventional n-channel MOSFET on a Si(100) surface. Thus, a high-speed and low-flicker-noise p-channel MOSFET can be realized on a flat Si(110) surface. Furthermore, a CMOS implementation in which the current drivabilities of the p-channel and n-channel MOSFETs are balanced can be realized (balanced CMOS). These advantages are very useful in analog/digital mixed-signal circuits.
- Published
- 2007