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Gold (50 nm)/bismuth ferrite (BFO) (100 nm) metal-semiconductor Schottky junction is fabricated using pulsed laser deposition (PLD) method on a Si substrate. BFO (BiFeO3) target for PLD deposition was made using BFO nanoparticles synthesized through sol-gel method. The forward- and reverse-bias current-voltage (I-V) characteristics of Au/BFO junction exhibit rectifier characteristics. The threshold voltage (Vγ) is 0.3 V which is in agreement with that of a conventional Schottky diode. I-V measurements were done with and without dc magnetic fields (H) to show the tuning of threshold voltage and forward-bias diode current. I-V characteristic shows distinct hysteresis behavior indicating hysteretic switching. Further, the fabricated diode was used as a half-wave rectifier. It has been demonstrated that the Au/BFO Schottky diode is a better high-frequency signal processing diode in comparison to a normal p-n junction silicon diode. Output waveforms were taken over a range of frequencies for both Au/BFO and Si diodes. An Si diode cannot rectify above 10 kHz, whereas Au/BFO junction diode can rectify even up to 1-MHz frequency. At high-frequency, Au/BFO diode exhibits “capacitor filtering effect,” resulting in higher dc voltages. [ABSTRACT FROM AUTHOR]

The aim of this paper is the analysis of the multipactor effect in a parallel-plate waveguide when a ferrite slab, transversally magnetized by a static magnetic field parallel to the waveguide walls, is present. Employing an in-house developed code, numerical simulations are performed to predict the multipactor radio frequency voltage threshold in such a ferrite-loaded waveguide. Variations of the ferrite magnetization field strength and the ferrite slab height are analyzed. Effective electron trajectories are also shown for a better understanding of the breakdown phenomenon, finding different multipactor regimes. [ABSTRACT FROM AUTHOR]