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This paper provides an approach to monitor oscillation status in tunnel diode measurement circuits-by,measuring the second derivative of the current-voltage (I-V) characteristic curve while doing I-V curve measurement. The method of using the second derivative to detect oscillations works even when the oscillation frequency is ultrahigh or the oscillation amplitude is very small, e.g., below 10 mV. In this paper, the experimental principle of the tunneling spectroscopy was extended to measurement circuits with the presence of internal oscillations, in contrast to the conventional tunneling spectroscopy, which normally does not deal with internal oscillation. The numerical relationships between the measured average values of transient derivatives and the derivatives of the average current are derived: The average values of the transient first and second derivatives are shown to equal the derivatives of the average current. These relationships serve as the foundation for the authors' experiments. The typical oscillation characteristics in the curves of the first and the second derivatives are used to detect the presence of oscillations and the bias voltage range of oscillation in the I-V curve. The monitor of oscillation status during measurements provides the tester the confidence in the measurement data and whether it is necessary to improve the test circuit further. Finally, benefited from free-of-oscillation, the indirect tunneling current contributions arising by 121-mV (TO + 0) two-phonon combination, 144-mV (TA + 0 + 0) and 181-mV (TO + 0 + 0) three-phonon combinations at the negative differential resistance region are observed from a silicon Esaki tunnel diode at 4.2 K.

In this paper, a post superacid (SA) treatment was proposed to enhance the performance of InAs FinFETs on SiO2/Si substrates. Typically, the subthreshold swing (SS) has reduced from 217 to 170 mV/decade and the transconductance (gm) has increased from 6.44 to 26.5 μS/μm after SA treatment. It was found that the interfacial In2O3 at the InAs/ZrO2 interface was effectively reduced after SA treatment due to the strong protonating nature of the SA solution. As a result, the interface trap density was reduced leading to a pronounced reduction of sheet resistance after SA treatment. The modeling of transfer characteristics indicates that the carrier mobility is enhanced by 5.87.1 folds after SA treatment due to interfacial traps reduction. The results suggest that SA treatment can be potentially extended to other III-V MOSFETs to enhance the device performances.

In this paper, a post superacid (SA) treatment was proposed to enhance the performance of InAs FinFETs on SiO2/Si substrates. Typically, the subthreshold swing (SS) has reduced from 217 to 170 mV/decade and the transconductance (gm) has increased from 6.44 to 26.5 μS/μm after SA treatment. It was found that the interfacial In2O3 at the InAs/ZrO2 interface was effectively reduced after SA treatment due to the strong protonating nature of the SA solution. As a result, the interface trap density was reduced leading to a pronounced reduction of sheet resistance after SA treatment. The modeling of transfer characteristics indicates that the carrier mobility is enhanced by 5.87.1 folds after SA treatment due to interfacial traps reduction. The results suggest that SA treatment can be potentially extended to other III-V MOSFETs to enhance the device performances.

Since the discovery of graphene in 2004, which proved the existence of 2-D crystals in nature, layered materials also known as van der Waals solids have received extensive reexamination, especially in the single-layer and multilayer forms because of their van der Waals type structure and unique properties that not only benefit many existing electronic components but also enable novel device concepts and design architectures. Numerous research efforts have been invested in these materials, and enormous quantities of results have been generated during the past 14 years. This paper provides an overview of the key physics and technology issues along with the most promising nanoelectronic applications of these materials and also identifies the challenges in this rapidly evolving field.

Since the discovery of graphene in 2004, which proved the existence of 2-D crystals in nature, layered materials also known as van der Waals solids have received extensive reexamination, especially in the single-layer and multilayer forms because of their van der Waals type structure and unique properties that not only benefit many existing electronic components but also enable novel device concepts and design architectures. Numerous research efforts have been invested in these materials, and enormous quantities of results have been generated during the past 14 years. This paper provides an overview of the key physics and technology issues along with the most promising nanoelectronic applications of these materials and also identifies the challenges in this rapidly evolving field.

In this paper, β-Ga2O3 thin films were grown on a p-Si substrate using the sol-gel method. Structural characterization of the films was performed using X-ray diffraction. Electrical parameters such as breakdown field, interface traps density (Dit), and series resistance (Rs) were investigated at room temperature. The interface trap density was found to be 1012 eV-1 cm-2 using the Hill-Coleman method. This result is valuable for MOS capacitor applications. Dielectric parameters were investigated in the wide frequency range (20 kHz-1 MHz) at room temperature. We observed that these parameters have a strong dependence on frequency and voltage.

Attributed to its advantages of super mechanical flexibility, very low-temperature processing, and compatibility with low cost and high throughput manufacturing, organic thin-film transistor (OTFT) technology is able to bring electrical, mechanical, and industrial benefits to a wide range of new applications by activating nonflat surfaces with flexible displays, sensors, and other electronic functions. Despite both strong application demand and these significant technological advances, there is still a gap to be filled for OTFT technology to be widely commercially adopted. This paper provides a comprehensive review of the current status of OTFT technologies ranging from material, device, process, and integration, to design and system applications, and clarifies the real challenges behind to be addressed.

In this paper, β-Ga2O3 thin films were grown on a p-Si substrate using the sol-gel method. Structural characterization of the films was performed using X-ray diffraction. Electrical parameters such as breakdown field, interface traps density (Dit), and series resistance (Rs) were investigated at room temperature. The interface trap density was found to be 1012 eV-1 cm-2 using the Hill-Coleman method. This result is valuable for MOS capacitor applications. Dielectric parameters were investigated in the wide frequency range (20 kHz-1 MHz) at room temperature. We observed that these parameters have a strong dependence on frequency and voltage.

Attributed to its advantages of super mechanical flexibility, very low-temperature processing, and compatibility with low cost and high throughput manufacturing, organic thin-film transistor (OTFT) technology is able to bring electrical, mechanical, and industrial benefits to a wide range of new applications by activating nonflat surfaces with flexible displays, sensors, and other electronic functions. Despite both strong application demand and these significant technological advances, there is still a gap to be filled for OTFT technology to be widely commercially adopted. This paper provides a comprehensive review of the current status of OTFT technologies ranging from material, device, process, and integration, to design and system applications, and clarifies the real challenges behind to be addressed.