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Your search keyword '"Zhang, En Xia"' showing total 6 results
Start Over Author "Zhang, En Xia" Publication Year Range Last 50 years Journal ieee transactions on electron devices
6 results on '"Zhang, En Xia"'

2. Low-Frequency and Random Telegraph Noise in 14-nm Bulk Si Charge-Trap Transistors

Author

Gorchichko, Mariia, primary, Zhang, En Xia, additional, Reaz, Mahmud, additional, Li, Kan, additional, Wang, Peng Fei, additional, Cao, Jingchen, additional, Brewer, Rachel M., additional, Schrimpf, Ronald D., additional, Reed, Robert A., additional, Sierawski, Brian D., additional, Alles, Michael L., additional, Cox, Jonathan, additional, Moran, Steven L., additional, Iyer, Subramanian S., additional, and Fleetwood, Daniel M., additional

Published
2023
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3. 3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs

Author

Reaz, Mahmud, primary, Tonigan, Andrew M., additional, Li, Kan, additional, Smith, M. Brandon, additional, Rony, Mohammed W., additional, Gorchichko, Mariia, additional, O'Hara, Andrew, additional, Linten, Dimitri, additional, Mitard, Jerome, additional, Fang, Jingtian, additional, Zhang, En Xia, additional, Alles, Michael L., additional, Weller, Robert A., additional, Fleetwood, Daniel M., additional, Reed, Robert A., additional, Fischetti, Massimo V., additional, Pantelides, Sokrates T., additional, Weeden-Wright, Stephanie L., additional, and Schrimpf, Ronald D., additional

Published
2021
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6. Temperature Dependence and Postirradiation Annealing Response of the 1/f Noise of 4H-SiC MOSFETs.

Author

Zhang, Cher Xuan, Shen, Xiao, Zhang, En Xia, Fleetwood, Daniel M., Schrimpf, Ronald D., Francis, Sarah Ashley, Roy, Tania, Dhar, Sarit, Ryu, Sei-Hyung, and Pantelides, Sokrates T.

Subjects
SILICON carbide, METAL oxide semiconductor field-effect transistors, OXIDES, BAND gaps, TEMPERATURE effect, ANNEALING of semiconductors
Abstract

The temperature dependence of the low-frequency noise of 4H-silicon carbide (SiC) MOSFETs with nitrided oxides is reported over the temperature range 85–510 K. The 1/f noise decreases significantly with increasing measurement temperature. This decrease in noise results primarily from a decrease in the density of interface traps at increasing temperatures. The 1/f noise is also characterized after total ionizing dose irradiation and postirradiation annealing. No significant change in the 1/f noise is observed after the devices are irradiated to 1 Mrad (SiO2) and then annealed under bias at elevated temperature. These results show that the 1/f noise in 4H-SiC MOSFETs is dominated by the interaction of channel carriers with slow interface traps at temperatures <360~K and with border traps >\rm\!360~K. This result contrasts with most experience with Si/SiO2-based MOSFETs, and results from the wider bandgap and greater density of slow interface traps in SiC/SiO2-based MOSFETs than in Si/SiO2-based MOSFETs. [ABSTRACT FROM AUTHOR]

Published
2013
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