1. Compact Model of Subvolume MTJ and Its Design Application at Nanoscale Technology Nodes.
- Author
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Zhang, Yue, Yan, Bonan, Kang, Wang, Cheng, Yuanqing, Klein, Jacques-Olivier, Zhang, Youguang, Chen, Yiran, and Zhao, Weisheng
- Subjects
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MAGNETIC tunnelling , *HYBRID integrated circuits , *SPIN transfer torque , *CURRENT density (Electromagnetism) , *THERMAL stability - Abstract
The current-induced perpendicular magnetic anisotropy magnetic tunnel junctions (p-MTJs) offer a number of advantages, such as high density and high speed. As p-MTJs downscale to $\sim 40$ nm, further performance enhancements can be realized thanks to high spin-torque efficiency, i.e., lower critical current density and higher thermal stability. In this paper, we investigate the origin of high spin-torque efficiency and give a phenomenological theory to describe the critical current reduction due to the subvolume activation. Based on various physical theories and structural parameters, a compact model of nanoscale MTJ is developed and demonstrates a satisfactory agreement with experimental results. Dynamic, static, and stochastic switching behaviors have been addressed and validated. Then, we perform mixed simulations for hybrid MTJ/CMOS read/write circuits, magnetic random access memory, and magnetic flip-flop to evaluate their performance. Analyses of energy consumption are given to show the prospect of MTJ technology node miniaturization. [ABSTRACT FROM AUTHOR]
- Published
- 2015
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