Search

Your search keyword '"PHONON scattering"' showing total 118 results

Search Constraints

Start Over You searched for: Descriptor "PHONON scattering" Remove constraint Descriptor: "PHONON scattering" Publication Year Range Last 50 years Remove constraint Publication Year Range: Last 50 years Journal ieee transactions on electron devices Remove constraint Journal: ieee transactions on electron devices Publisher ieee Remove constraint Publisher: ieee
118 results on '"PHONON scattering"'

Search Results

1. Investigation of Self-Heating Effects in UTBB FD-SOI MOSFETs by a Modified Thermal Conductivity Model.

2. Design of Monolayer MoS 2 Nanosheet Transistors for Low-Power Applications.

3. Anti-Screening Effect of Gate-Electrode Holes on Remote Phonon Scattering in InGaZnO Thin-Film Transistors.

4. Comparative Study of Hall Effect Mobility in Inversion Layer of 4H-SiC MOSFETs With Nitrided and Phosphorus-Doped Gate Oxides.

5. Modeling of Bias-Dependent Effective Velocity and Its Impact on Saturation Transconductance in AlGaN/GaN HEMTs.

6. Influence of Si-Substrate Concentration on Electrical Properties of Back- and Top-Gate MoS₂ Transistors.

7. Epi-Gd₂O₃-MOSHEMT: A Potential Solution Toward Leveraging the Application of AlGaN/GaN/Si HEMT With Improved ION/IOFF Operating at 473 K.

8. Channel Properties of Ga₂O₃-on-SiC MOSFETs.

9. Resistive Analysis of Scattering-Dependent Electrical Transport in Single-Wall Carbon-Nanotube Networks.

10. Hetero-Interfacial Thermal Resistance Effects on Device Performance of Stacked Gate-All-Around Nanosheet FET.

11. Study on Degradation Mechanisms of Thermal Conductivity for Confined Nanochannel in Gate-All-Around Silicon Nanowire Field-Effect Transistors.

12. Realistic Modeling of MoS₂ Piezoelectric Transistor.

13. Experimental Study of 1/ƒ1+α Noise in Transient Leakage Current of Metal–Insulator–Metal With Stacked High-k Polycrystalline Films.

14. Bias-Dependent Electron Velocity Extracted From N-Polar GaN Deep Recess HEMTs.

15. Effects of Interface Traps and Self-Heating on the Performance of GAA GaN Vertical Nanowire MOSFET.

16. Field-Dependent Mobility Enhancement and Contact Resistance in a-IGZO TFTs.

17. Exploring the Designs of p-Type Piezoelectric FinFETs Based on NEGF Transport Simulations Comprising Phonon Scattering.

18. Impact of Phonon Scattering on the Negative-Differential-Resistance Behavior in Graphene Nanoribbon p-n Junctions.

19. Role of Biasing and Device Size on Phonon Scattering in Graphene Nanoribbon Transistors.

20. Hybrid Electrothermal Simulation of a 3-D Fin-Shaped Field-Effect Transistor Based on GaN Nanowires.

21. Electron Back Scattering in CNTFETs.

22. Comparison of Different Scattering Mechanisms in the Ge (111), (110), and (100) Inversion Layers of nMOSFETs With Si nMOSFETs Under High Normal Electric Fields.

23. Computational Study of Effects of Surface Roughness and Impurity Scattering in Si Double-Gate Junctionless Transistors.

24. Investigation of Hole Mobility in Strained InSb Ultrathin Body pMOSFETs.

25. Empirical Model for the Effective Electron Mobility in Silicon Nanowires.

26. Implementation of DPL-DD Model for the Simulation of Nanoscale MOS Devices.

27. Phonon-Limited Electron Mobility in Rectangular Cross-Sectional Ge Nanowires.

28. Simulation of the Performance of Graphene FETs With a Semiclassical Model, Including Band-to-Band Tunneling.

29. On Monolayer MoS2 Field-Effect Transistors at the Scaling Limit.

30. Impact of Dimensional Scaling and Size Effects on Spin Transport in Copper and Aluminum Interconnects.

31. Spin Transport in Bilayer Graphene Armchair Nanoribbon: A Monte Carlo Simulation Study.

32. Interface Traps in InAs Nanowire Tunnel FETs and MOSFETs—Part II: Comparative Analysis and Trap-Induced Variability.

33. Interface Traps in InAs Nanowire Tunnel-FETs and MOSFETs—Part I: Model Description and Single Trap Analysis in Tunnel-FETs.

34. Coupled Electro–Thermal Simulation for Self-Heating Effects in Graphene Transistors.

35. Performances of Strained Nanowire Devices: Ballistic Versus Scattering-Limited Currents.

36. Temperature Dependence of Annealed and Nonannealed HEMT Ohmic Contacts Between 5 and 350 K.

37. Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs.

38. Fully Atomistic Simulations of Phonon-Limited Mobility of Electrons and Holes in \langle \001\rangle-, \langle \110\rangle-, and \langle \111\rangle-Oriented Si Nanowires.

39. Atomistic Investigation of Low-Field Mobility in Graphene Nanoribbons.

40. Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors.

41. A Comparative Study of Surface-Roughness-Induced Variability in Silicon Nanowire and Double-Gate FETs.

42. RF Performance Potential of Array-Based Carbon-Nanotube Transistors—Part I: Intrinsic Results.

43. Quantum Transport Simulation of Strain and Orientation Effects in Sub-20 nm Silicon-on-Insulator FinFETs.

44. Modeling and Performance Characterization of Double-Walled Carbon Nanotube Array Field-Effect Transistors.

45. On the Possibility of Obtaining MOSFET-Like Performance and Sub-60-mV/dec Swing in 1-D Broken-Gap Tunnel Transistors.

46. Implementation of Electron-Phonon Scattering in a CNTFET Compact Model.

47. Performance Comparison Between p-i-n Tunneling Transistors and Conventional MOSFETs.

48. Quasi-Ballistic Transport in Nanowire Field-Effect Transistors.

49. Performance Modeling for Single- and Multiwall Carbon Nanotubes as Signal and Power Interconnects in Gigascale Systems.

50. Influence of Elastic and Inelastic Phonon Scattering on the Drive Current of Quasi-Ballistic MOSFETs.

Catalog

Books, media, physical & digital resources