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Ecofriendly solution processed organic transistors were demonstrated on a biodegradable paper substrate for −5-V operation. Blend of solution processed organic semiconductor TIPS-pentacene and polystyr- ene (PS) polymer was utilized to form the active layer, along with a natural protein, i.e., gelatin as a primary gate dielectric, both of which offer eco-friendliness from proc- ess and material aspects. Fabricated organic transistors showed excellent transistor behavior for p-channel opera- tion with a maximum process transconductance value of 15 nF/ $\text{V}\cdot \text{s}$ leading to the mobility of 2.3 cm2/ $\text{V}\cdot \text{s}$ obtained from capacitance density derived at 1 kHz. The average threshold voltage of −0.7 V suitable for low-voltage opera- tion was achieved along with decent ON/OFF current ratio of $\sim 10^{{4}}$ . High electrical stability was demonstrated through repeatability of transfer characteristics and bias-stress measurements. Excellent environmental stability in normal ambient was observed up to seven weeks. These devices showed circuit applicability with decent switching in resis- tive load inverters and good sensitivity to ultraviolet (UV) light, making them a suitable candidate for exploration for multifunctional and disposable application.

To meet the growing demand for self-powered pressure sensors that can be used to detect both dynamic and static forces, this study presents a self-powered pressure sensor driven by the triboelectric nanogenerator (TENG). This TENG-driven piezoresistive pressure sensor (DRPS) consists of paper-based reduced graphene oxide (rGO)/carbon nanotube (CNT) piezoresistive pressure sensor and polyimide (PI)/copper TENG in series. Our piezoresistive pressure sensor has a high sensitivity (26.4 kPa−1) in the small pressure range (0–3 kPa). The open-circuit voltage of our PI/copper TENG enhanced by rGO paper is about 250 V. The DRPS has a high linear sensitivity (18.6782 kPa−1) in the pressure range of 0–5 kPa, which meets the demand for self-powered pressure sensors for detecting various forces. The response time and the recovery time of DPRS are both 500 ms. The Morse code is achieved by the DRPS, which demonstrates the potential application. This study presents a new insight into the development of self-powered pressure sensors.

On behalf of myself and the other guest editors for the Special Issue on “Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications” featured in this month’s IEEE Transactions on Electron Devices, we are pleased to offer readers a selection of papers that span the contemporary landscape of wide and ultrawide bandgap semiconductor devices.

Fulfilling the mission of IEEE Transactions on Electron Devices (TED), to publish high-quality, high-impact papers, relies fundamentally on our authors who entrust their work with us, our editors who arrange the reviews, and—critically—on the competence, diligence, and generosity of reviewers who voluntarily contribute their time for the difficult and painstaking task of performing critical and constructive reviews. The TED Editorial Board and I are well aware of our dependence on high-quality and timely reviews and wish to acknowledge and recognize the individuals from across the technical community who have so selflessly contributed to this effort. Without the contributions of all of these volunteers, TED could not be the trusted resource for technical information that we all count on it to be.

Prospective authors are requested to submit new, unpublished manuscripts for inclusion in the upcoming event described in this call for papers.

Prospective authors are requested to submit new, unpublished manuscripts for inclusion in the upcoming event described in this call for papers.

Prospective authors are requested to submit new, unpublished manuscripts for inclusion in the upcoming event described in this call for papers.

Prospective authors are requested to submit new, unpublished manuscripts for inclusion in the upcoming event described in this call for papers.

Prospective authors are requested to submit new, unpublished manuscripts for inclusion in the upcoming event described in this call for papers.

Prospective authors are requested to submit new, unpublished manuscripts for inclusion in the upcoming event described in this call for papers.

Prospective authors are requested to submit new, unpublished manuscripts for inclusion in the upcoming event described in this call for papers.

This paper proposes a method whereby the reflection of an electromagnetic wave from a surface can be controlled. The idea is to use a p-n junction as the controlling device. The device is made in such a way that the junction is parallel to the surface upon which the electromagnetic radiation is impinging. If the p region is very narrow the wave will penetrate through it into the depletion region. If the n region is hi conductivity, the wave is reflected from it. Then if the depletion layer width is right for the frequency considered, the reflected wave will interact with the impinging wave to give the desired effect. By changing the bias applied to the junction a tuning effect can be obtained. Detailed analysis of the proposed device is covered in the paper. There are some practical limitations to creating the device described, but the idea and the method of analysis could be useful to individuals interested in creating microwave tuning and control components.

Various authors have presented analyses of crossed-field amplifiers. Generally, these analyses have dealt with very thin electron beams in the presence of crossed-fields or with beams in which the bulk ac charge density within the beam has been neglected. It is the purpose of this paper to develop a field-theory analysis which is applicable to both thick or thin beams and which includes the effect of space charge. In place of the usual approximate match at the input boundary plane, a rigorous variational technique is presented, which considers the effect of the cutoff waves on the amplitudes of the propagating waves. This enables one to solve the input boundary problem for the first time insofar as the amplitudes of the propagating waves are concerned, without determining the individual amplitudes of the cutoff waves implicitly. As opposed to the usual approximate match, which is only valid for a thin, unmodulated entering electron stream, this variational method is valid for both thick and thin beams, as well as unmodulated or modulated beams entering a crossed-field slow-wave interaction region or entering a crossed-field drift region. The paper presents propagation constants obtained for thick beams based on the author's model. The variational procedure, which is a valid technique for other models as well as other types of beam devices, has been applied to one numerical case involving a thin beam and the results are compared with the results of the usual approximate match. A modification of the complex amplitudes of the excited waves, even in the case of thin beams, is noted.

This paper describes the salient features of a magnetron which attained by the spring of 1953 a peak power of up to 10 megawatts at 10 microseconds pulse duration and 17 kilowatts average power. There was little previous knowledge or experience available for guidance at the time (1947) the development was started. Among the most important problems which had to be solved were: 1) The establishment of reliable criteria of π-mode stability as guides for high power magnetron design; 2) the development of a microwave window of sufficient bandwidth for lower order mode loading and which would permit operation of the tube at full power in air at atmospheric pressure; 3) the development of a cathode capable of withstanding high back bombardment power with reasonable life; 4) the development of methods for fabricating a large magnetron; 5) the elimination of voltage breakdown in various parts of the magnetron; 6) the development of a modulator to produce and measure 2 to 10-microsecond pulses up to 100 kilovolts and up to 400 amperes; and 7) the development of a calorimetric load of low thermal capacity for testing the magnetron at full power. This paper is intended to assist the designers of magnetrons and systems to better appreciate: 1) The problems involved in the simultaneous attainment of multimegawatt power levels at long pulse durations, long wavelength and high duty; 2) what has been accomplished in this regime with magnetrons; and 3) that the experimental material given in the discussion is representative of an advance in magnetron art and not necessarily a limitation of what can be expected by way of performance from the pulsed magnetron.

This paper is concerned only with the study of primary grid emission of various types of grid materials resulting from the evaporation products of L, impregnated, oxide-coated, and thoriated tungsten cathodes. The factors contributing to grid emission are analyzed. A detailed discussion of the performance of titanium, which exhibits excellent grid emission inhibiting properties, is included. In our investigation a planar triode construction was used, the grids of which consisted of a two-terminal loop of 0.010 inch diameter wire. In the assembly and processing utmost precautions were taken to insure minimum contamination of the various elements. The methods of assembly and processing are fully described in the paper. These tubes were tested using pulsed and dc techniques, and a discussion of the testing methods is included. The work function of a tungsten grid exposed to the evaporation products of the L, impregnated, and oxide-coated cathodes varies from 1.2 to 2.0 ev, the final value depending upon the past history of the cathodes, namely, the nature of the surface of the grid and the temperature and length of exposure to the cathodes.

These instructions give guidelines for preparing papers for this publication. Presents information for authors publishing in this journal.

Prospective authors are requested to submit new, unpublished manuscripts for inclusion in the upcoming event described in this call for papers.

These instructions give guidelines for preparing papers for this publication. Presents information for authors publishing in this journal.

Prospective authors are requested to submit new, unpublished manuscripts for inclusion in the upcoming event described in this call for papers.

Prospective authors are requested to submit new, unpublished manuscripts for inclusion in the upcoming event described in this call for papers.

The ability of IEEE Transactions on Electron Devices (T-ED) to publish high-quality papers critically depends upon the competence, diligence, and generosity of reviewers who voluntarily contribute their time for this purpose. The T-ED Editorial Board and I are well aware of our dependence on high-quality and timely reviews and wish to acknowledge and recognize the individuals from inside and out of the Electron Devices Society (EDS) who have so selflessly contributed to this effort. Within EDS, contributing to the welfare of the Society and to the promotion of its goals is widely regarded as a duty of each member. Acting as a reviewer is one way to accomplish this duty.

These instructions give guidelines for preparing papers for this publication. Presents information for authors publishing in this journal.

Prospective authors are requested to submit new, unpublished manuscripts for inclusion in the upcoming event described in this call for papers.

Prospective authors are requested to submit new, unpublished manuscripts for inclusion in the upcoming event described in this call for papers.

The nondestructive readout (NDRO) mode of op­ eration of image sensors is desirable to develop for the future intelligent image sensors. However, NDRO is not achievable with the conventional CCD image sensors. In this paper, we will examine the NDRO performance of two static induction transistor (SIT) photo sensors, a 40 x 40 pixel area array, and a 140-b linear array. We demonstrated NDRO operation in the SIT sensors by im­ aging with the area array and by examining the output wave­ form of the linear array. The charge lost per one NDRO cycle in the linear array was 0.014% near the saturation signal level and no charge loss could be detected at the ≤0.5 saturation level. NDRO performance in the area array was degraded com­ pared to the linear array. The degradation was due to the larger value of the load capacitance connected to the output electrode of the SIT. The NDRO operation also enables the cancellation of both the photosite reset noise and the signal nonuniformity by sub­tracting the first NDRO output from the following NDRO out­ puts, as well as an advantage to monitor the signal state during the integration period.

This paper compared the performance of conventional fully depleted (FD) SOI MOSFETs and body-grounded nonfully depleted (NFD) SOI MOSFETs for analog applications, A new low-barrier body-contact (LBBC) technology has been developed to provide effective body contact. Experimental results show that the NFD MOSFET's with LBBC structure give one order of magnitude higher output resistance, significantly lower flicker noise, improved subthreshold characteristics, and minimal threshold voltage variation compared with conventional FD SOI MOSFETs. The device characteristics of the LBBC MOSFET's are more desirable for fabricating high performance analog or mixed analog/digital CMOS circuits.<>

The development of the transistor is undoubtedly one of the most significant contributions in the field of electronic components. Many organizations have established extensive projects for the development of transistor circuits, and practical applications will certainly be reported in increasing numbers in the near future. In order to lay the foundation for transistor circuit development at the Stanford Research Institute, an internally-sponsored project was initiated in December 1951 for investigation of the characteristics of point-contact transistors. Some of the results of the work of that project are presented in this paper.

The attenuator is a common and important component of every traveling — wave tube which uses a bi-directionally propagating slow-wave structure. There are several types of attenuators suitable for traveling-wave tube use and many aspects of each type. This paper is concerned only with distributed attenuators suitable for application in high-power, helix-type traveling-wave tubes and presents experimental evidence that there are three parameters, (a) loss, (b) circuit impedance, and (c) circuit phase velocity, needed to adequately describe the attenuator section.

The use of a traveling-wave tube1 as a power mixer employing phase modulation at a single frequency has been described by W. J. Bray.2 To use the same modulation principle with a wide band of modulation frequencies (hundreds of megacycles), excessive modulating power would be needed. This paper presents theory and experimental data for a broad-band traveling-wave type mixer requiring low modulating power. It consists of an input helix, a drift tube and an output helix arranged successively along a beam. Low modulating voltage is realized by operating the drift tube at low potential; the output helix is operated at high potential so the required power output can be obtained.

This paper discusses the transient response of junction transistors. The experimental results are compared with the theoretical relationships. The case for low load resistance, in which collector cutoff due to its capacitance does not occur, is considered. The treatment is confined to small-signal operation.

This paper briefly discusses the possibility of obtaining coherent microwave radiation from crystals and gases. It will be shown that it is possible to obtain coherent microwave radiation by such methods, provided that a certain non equilibrium energy distribution is first produced. Methods are discussed for producing such a distribution. The amount of amplification which can be produced by such methods is very small Tinder ordinary circumstances and does not appear to be able to compete with other methods. The method may have certain special applications.

The effects of conductivity modulation on the terminal characteristics of a semiconductor device are analyzed. Considerable attention is paid to the accompanying reactive effects. The solution for the flow of added carriers is based upon the assumption of quasi-charge neutrality and absence of trapping effects. A double-base diode structure is selected to investigate the transient and ac steady-state effects associated with conductivity modulation, since conductivity modulation by injected carriers proves to be strong in this device. The input characteristics of the double-base diode are considered in this paper. Reactive effects (both inductive and capacitive) in p-n junction diodes, previously reported by other researchers, are easily derived as a special case of the more general structure studied here. Two models are employed in the analysis. One model is used to study double-base diodes made of extrinsic filaments. Here, due to the externally applied electric field, injected carriers are transported essentially by the drift mechanism. The second model describes devices constructed of high resistivity material such that excess carriers are transported primarily by diffusion, as in an intrinsic structure. However in both models drift currents are responsible for inductive and negative resistive effects. The input static characteristics, transient effects and impedance predicted from theory are in good agreement with those observed experimentally.

A semitheoretical, semiheuristic analysis is given of crossed-field electron interaction of the distributed-emission type. The emphasis of this paper is on the over-all picture of this complex type of interaction, rather than on mathematical exactness. The results are given in terms of five equations from which can be calculated the amount of dc applied power which is converted to real and reactive RF power under given conditions of frequency, RF potential, and magnetic-field strength. These equations are applied to the magnetron oscillator to predict power delivered to the anode by the electron bunches, frequency-pushing characteristics, V-I characteristics, and Rieke Diagrams. The agreement of the experimental data with the calculations over this wide range of characteristics confirms the validity of the analysis.

This paper describes the application of a ferrite-tunedX-band klystron to produce very wide-band frequency modulation with exceptionally low accompanying power variation. By perturbation techniques, a theoretical analysis of the magnetically tuned klystron is made in terms of the static and dynamic intrinisic properties of the ferrite. The observed operating characteristics show good agreement with the predicted behavior. The design of a practical magnetically tuned X-band klystron for frequency modulation application is discussed in detail. Designs which included a fixed bias field transverse to the tuning field allowed frequency deviation over a 600-Mc bandwidth to be obtained with very good linearity at modulation frequencies below 500 cps. The change in power was less than ± 6 per cent. Another model permitted modulation frequency components up to 50 kc but tuning bandwidth was reduced to 300 Mc.

Color television cameras which are now widely used require three separate camera tubes to supply the simultaneous primary color information transmitted by the compatible system. This paper describes a developmental tricolor camera tube of the vidicon type for use in a single-tube color camera. The ability to generate the three simultaneous signals is achieved in the tricolor vidicon by means of a multiple-electrode target structure having three interlocking groups of color-sensitive strips connected to separate output terminals for each primary color. A single low-velocity electron beam scans the photoconductive target. No special requirements are made on the beam with respect to focus or scanning accuracy. Registry of the three signals is inherent in the design of the target. The performance of the developmental cameras which have been constructed to date does not equal the three-tube image orthicon camera from the standpoint of sensitivity, color fidelity, and uniformity. In its present state, the tube is potentially useful for industrial and scientific purposes where sufficient light is available and structural defects do not obscure the information desired. To extend its range of application, the development of more sensitive photoconductors and improved methods of fabrication are required.

It has been shown that in an electron beam with Brillouin focusing, two pairs of space-charge waves are possible. One pair has the peculiar property of having no RF charge density in the volume of the beam, with most of the current being caused by ripples of the boundary. This paper shows that, in the case of modulation by the gridless gap of a klystron, it is only these space-charge waves which are excited in the electron beam. This result has also been verified elsewhere by experiment. In addition to the detailed calculation, a simple proof is given which demonstrates why one gets the particular behavior predicted by the detailed theory, namely, a modulated beam with no RF charge density in the volume. This effect arises from the fact that the modulation is produced by an electric field with zero divergence, and therefore the RF velocity produced also has zero divergence. Zero divergence of the velocity is the condition for an incompressible fluid; i.e., constant density. In the case of modulation by a grid, the electric field does not have zero divergence and this kind of behavior does not occur.

The microalloy transistor is fabricated by jet electrochemical techniques. It differs from the surface-barrier transistor (sbt) in that extremely shallow alloy contacts replace the surface-barrier contacts. The microalloy contacts are accomplished in a few seconds at a low alloy temperature by a fabrication technique which is described herein. The high-injection efficiency of the resulting contact makes possible increased efficiency of high-frequency transistors. This paper reviews the microalloying process in its application to both homogeneous and graded-base transistors and analyzes mathematically the microalloy emitter region.