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Architecting PCM, especially MLC PCM, as main memory for MCUs is a promising technique to replace conventional DRAM deployment. However, PCM/MLC PCM suffers from long write latency and large write energy. Recent work has proposed a compiler directed dual-write (CDDW) scheme to combat the drawbacks of PCM by adopting fast or slow mode for different write operations. For large-scale loops, we observe that write instances' lifetime is very long and can only be written by the expensive slow mode. This paper proposes a write mode aware loop tiling approach to effectively reduce the lifetime of write instances and maximize the number of efficient fast writes in loops. The experimental results show that the proposed approach improves performance by 50.8 percent and reduces dynamic energy by 32.0 percent across a set of benchmarks compared to the CDDW approach on average. [ABSTRACT FROM AUTHOR]

The non-volatile memory (NVM) which can provide DRAM-like performance and disk-like persistency has the potential to build single-level systems by replacing both DRAM and disk. Keeping data consistency in such systems is non-trivial because memory writes may be reordered by CPU. Although ordered memory writes for achieving data consistency can be implemented using the memory fence and the CPU cache line flush instructions, they introduce a significant overhead (more than 10X slower in performance). In this paper, we focus on an important and common data structure, B $^+$ Tree. Based on our quantitative analysis for consistent tree structures, we propose NV-Tree, a consistent, cache-optimized and workload-adaptive B $^+$ Tree variant with significantly reduced consistency cost (up to 96 percent reduction in CPU cache line flush). To further optimize NV-Tree under various workloads, we propose a workload-adaptive scheme in which the sizes of individual nodes can be dynamically adjusted to improve the performance over time. We implement and evaluate NV-Tree and NV-Store, a key-value store based on NV-Tree, on an NVDIMM server. NV-Tree outperforms the state-of-art consistent tree structures by up to 12X under write-intensive workloads. NV-Store increases the throughput by up to 7.3X under YCSB workloads compared to Redis. [ABSTRACT FROM AUTHOR]

Phase-change memory (PCM) has emerged as a candidate that overcomes the physical limitations faced by DRAM and NAND flash memory. While PCM has desirable properties in terms of scalability and density, it suffers from limited endurance. Repeated writes cause PCM cells to wear out and get permanently stuck at a specific value. Recovering from stuck-at faults through a proactive error correcting scheme is essential for the widespread adoption of PCM. In this paper, we propose Symbol Shifting as a practical technique to increase the number of faults that an error correcting code can cover in single and multilevel cells memory chips. Since stuck-at cells can still be read, errors are manifested only when a worn-out cell is to be programmed with a symbol value different than the value it is stuck at. After a write operation fails for a given block of data, another write operation is attempted with all original data symbols shifted to another memory level. Shifting the data is likely to bring the number of errors within the nominal capability of the deployed error correcting code. Requiring only one additional auxiliary cell, Symbol Shifting can increase the number of faults that an error correcting code can cover by up to double the nominal capability and extends the lifetime by up to 37 percent. [ABSTRACT FROM AUTHOR]