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This paper proposes and presents a class of substrate integrated waveguide (SIW) power dividers/combiners based on a modified Wilkinson architecture. The proposed design consists of a ring-type circuit of \(1.5~\lambda _{g}\) length with three waveguide ports. Impedance variation without affecting cutoff frequency and integration of isolation resistance are the two major limitations in connection with the design of SIW Wilkinson structures. Central ring part with different thickness ensures different impedance in the first proposed scheme while the half-mode SIW in the second option. As for the second limitation, the optimal configuration of integrating the isolation resistance is studied. A version without resistance is also examined using a broad-wall series slot. To validate the proposed concept, a bilayered circuit with standard Printed circuit board prototype was fabricated and measured. A table summarizing performances of all the proposed circuits shows a bandwidth of around 25% at the 10 dB reference. A negligible additional insertion loss is observed. The proposed design techniques are found useful at millimeter-wave frequencies where reduced physical dimensions make a circuit configuration suitable for low-cost implementation. This concept is also valid for rectangular waveguide counterparts. [ABSTRACT FROM AUTHOR]

For emerging millimeter-wave wireless applications at W- and E-bands, active components including LNA and power amplifier are preferably fabricated or surface-mounted on the materials of a high dielectric constant (such as CMOS and MHMIC). On the other hand, antennas or radiating elements should be developed on relatively low-dielectric constant substrates for the enhancement of gain and bandwidth. Therefore, the development of a wideband transition from high-to-low dielectric constant substrates becomes necessary because the use of wire bonding schemes brings up packaging, interconnects, and manufacturing problems at millimeter-wave frequencies. This paper presents a novel integrated wideband transition of substrate integrated waveguide (SIW) on high-to-low dielectric constant substrates. The transition is made of a single-layer structure, which consists of a tapered high-dielectric constant substrate that connects two SIWs. Because of the waveguide-based structure of the transition, it has a self-shielded configuration, and its interference is minimum. Simulated and measured results show that the bandwidth of the proposed transition covers almost the entire W- and E-bands with low insertion loss. [ABSTRACT FROM AUTHOR]

This paper presents and demonstrates a class of 3-D integration platforms of substrate-integrated waveguide (SIW). The proposed right angle E-plane corner based on SIW technology enables the implementation of various 3-D architectures of planar circuits with the printed circuit board and other similar processes. This design scheme brings up attractive advantages in terms of cost, flexibility, and integration. Two circuit prototypes with both 0- and 45^\circ vertical rotated arms are demonstrated. The straight version of the prototypes shows 0.5 dB of insertion loss from 30 to 40 GHz, while the rotated version gives 0.7 dB over the same frequency range. With this H-to-E-plane interconnect, a T-junction is studied and designed. Simulated results show 20-dB return loss over 19.25% of bandwidth. Measured results suggest an excellent performance within the experimental frequency range of 32–37.4 GHz, with 10-dB return loss and less than \pm4^\circ phase imbalance. An optimized wideband magic-T structure is demonstrated and fabricated. Both simulated and measured results show a very promising performance with very good isolation and power equality. With two 45^\circ vertical rotated arm bends, two antennas are used to build up a dual polarization system. An isolation of 20 dB is shown over 32–40 GHz and the radiation patterns of the antenna are also given. [ABSTRACT FROM PUBLISHER]