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This paper reports a study on the fabrication technology of high performance functional devices, where high temperature superconductor and compound semiconductor devices are monolithically integrated on the same substrate. We investigated optimal conditions for epitaxial liftoff process and succeeded in fabricating HTS device and GaAs MESFET on SrTiO/sub 3/ substrate without degrading characteristics of superconductor and semiconductor devices. We also carried out basic integrated circuit fabrication processes such as patterning and etching for quasi-monolithic structure. The results confirmed that fabricating high performance functional devices is feasible. [ABSTRACT FROM PUBLISHER]

To meet the specifications of future radar and communication systems we developed a low phase noise microwave oscillator. This feedback oscillator consists of a commercial MESFET-amplifier at room temperature and a LaAlO/sub 3/ dielectric resonator with high temperature superconducting (HTS) shielding at 63 K. The resonator operating at a resonance frequency of 5.6 GHz showed unloaded quality factors in the 10/sup 5/ to 10/sup 6/ range. By means of a strong resonator coupling (|S/sub 21/|=6 dB) and an amplifier gain of 20 dB we obtained an output power of +15 dBm. The phase noise L(f/sub m/) of the oscillator was below the detection limit for offset frequencies beyond 10 kHz. For offset frequencies below 5 kHz measurements revealed perfect L(f/sub m/)/spl prop/f/sub m//sup .3/-behaviour according to the Leeson model. The phase noise was -110 dBc/Hz at 1 kHz offset and -130 dBc/Hz at 10 kHz. This phase noise performance is superior to state of the art SAW- or quartz oscillators for f/sub m/>10 kHz. To further reduce the phase noise performance close to the carrier we investigated the implementation of a phase locked loop (PLL). The long term temperature stability of the oscillator frequency can be enhanced by introducing a central cylinder made from rutile (TiO/sub 2/). We present numerical and experimental results on this compensation. [ABSTRACT FROM PUBLISHER]