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A wideband (0 to 26.5 GHz) transition from conductor backed coplanar waveguide (CBCPW) to microstrip line has been developed. Field and impedance transformation have been used in the design; also, via holes were placed on the side ground planes of the CBCPW to suppress the parallel plate resonant mode thereby reducing radiation loss. A back-to-back transition board has been fabricated and tested. The test result shows good agreement with simulation. Under test, the back-to-back design insertion loss is less than 2 dB and the return loss is less than 15 dB from 0 to 26.5 GHz. [ABSTRACT FROM PUBLISHER]

An integrated equal-split Wilkinson power combiner/divider tailored for operation in the X-band is reported in this letter. The combiner features differential input/output ports with different characteristic impedances, thus embedding an impedance transformation feature. Over the frequency range from 8 to 14 GHz it shows insertion loss of 1.4dB, return loss greater than 12 dB and isolation greater than 10 dB. It is implemented in a SiGe bipolar technology, and it occupies an area of 0.12~mm^2. [ABSTRACT FROM PUBLISHER]

This letter proposes a parallel-segmentation method of a step-up transformer that simultaneously improves the impedance transformation ratio and passive efficiency. A corresponding scalable segmentation-based model is also developed on a silicon substrate case. Implementation of the proposed transformer using 0.18 \mum CMOS technology successfully demonstrated impedance transformation from 50 \Omega to 5.3 \Omega with a minimum insertion loss of 1.52 dB at 1.7 GHz. Self-inductance of 1.4 and 4.8 nH, and quality factor of 7.6 and 6.8, were obtained for primary and secondary windings, respectively. Results of the measurement of the transformer show high agreement with the proposed model and verify the accuracy of the physical behavior of the model within the frequency of interest. [ABSTRACT FROM PUBLISHER]

In this letter, we present a state-of-the-art, planar double-tuned transformer using high-, micromachined spiral inductors and integrated capacitors. This circuit provides a 4:1 impedance transformation over a 30% bandwidth centered at 4.06 GHz, with a minimum insertion loss of 1.50 dB. The fabricated circuit occupies a total area of 440 times 500 mum2and finds application in power amplifier and other matching applications. An accurate lumped-element circuit model and design tradeoffs are presented. We believe this is the first implementation of a planar microwave double-tuned transformer. [ABSTRACT FROM PUBLISHER]