1. Self-Aligned Microbonded Germanium Metal–Semiconductor–Metal Photodetectors Butt-Coupled to Si Waveguides
- Author
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Chih-Kuo Tseng, Yimin Kang, Wei-Ting Chen, Neil Na, Ku-Hung Chen, Han-Din Liu, and Ming-Chang M. Lee
- Subjects
Materials science ,Silicon ,business.industry ,Schottky barrier ,chemistry.chemical_element ,Photodetector ,Biasing ,Germanium ,Atomic and Molecular Physics, and Optics ,Amorphous solid ,Responsivity ,chemistry ,Optoelectronics ,Electrical and Electronic Engineering ,business ,Dark current - Abstract
We present a butt-coupled Germanium (Ge) metal-semiconductor-metal photodetectors on silicon (Si) waveguides. This device is implemented by a novel process using self-aligned microbonding technique and rapid-melt-growth method for monolithically integrating single-crystal Ge and Si devices on the same plane. Through inserting a thin amorphous Si (a-Si) layer between the Ge and metal contact, the Schottky barrier height is modulated, which effectively reduces the dark current and increases the operation speed. The fabricated device shows a low dark current of 0.24 μA, a 3 dB bandwidth of 15 GHz and a responsivity of 0.25 A/W, at a bias voltage of -2.6 V for wavelength 1310 nm.
- Published
- 2014
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