1. Improved AlGaN p-i-n Photodetectors for Monitoring of Ultraviolet Radiation
- Author
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Rachid Driad, Martin Walther, Susanne Kopta, Oliver John, Klaus Köhler, Norman Marenco, Oliver Ambacher, Martin Rutters, Bjorn Albrecht, Michael Kunzer, and Publica
- Subjects
Photocurrent ,Materials science ,business.industry ,Photodetector ,p-i-n diodes ,semiconductor epitaxial layers ,Specific detectivity ,Atomic and Molecular Physics, and Optics ,Photodiode ,law.invention ,Aluminium gallium nitride (Al(x)Ga(1-x)N) ,Responsivity ,law ,Rise time ,Ultraviolet light ,Optoelectronics ,Electrical and Electronic Engineering ,business ,ultraviolet (UV) photodetectors ,Dark current - Abstract
Improved aluminum-gallium-nitride (Al x Ga 1-x N) p-i-n photodetectors with different active regions are reported, designed for the measurement of UV-A (315 to 380 nm), UV-B (280 to 315 nm), and UV-C (
- Published
- 2014
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