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Start Over "Duerinckx, Filip" Journal ieee journal of photovoltaics
5 results on '"Duerinckx, Filip"'

2. Kerfless Epitaxial Mono Crystalline Si Wafers With Built-In Junction and From Reused Substrates for High-Efficiency PERx Cells

Author

Hao, Ruiying, primary, Ravi, T. S., additional, Siva, V., additional, Vatus, Jean, additional, Kuzma-Filipek, Izabela, additional, Duerinckx, Filip, additional, Recaman-Payo, Maria, additional, Aleman, Monica, additional, Cornagliotti, Emanuele, additional, Choulat, Patrick, additional, Russell, Richard, additional, Sharma, Aashish, additional, Tous, Loic, additional, Uruena, Angel, additional, Szlufcik, Jozef, additional, and Poortmans, Jef, additional

Published
2016
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3. Large-Area n-Type PERT Solar Cells Featuring Rear p+ Emitter Passivated by ALD Al2 O3

Author

Cornagliotti, Emanuele, primary, Uruena, Angel, additional, Aleman, Monica, additional, Sharma, Aashish, additional, Tous, Loic, additional, Russell, Richard, additional, Choulat, Patrick, additional, Chen, Jia, additional, John, Joachim, additional, Haslinger, Michael, additional, Duerinckx, Filip, additional, Dielissen, Bas, additional, Gortzen, Roger, additional, Black, Lachlan, additional, and Szlufcik, Jozef, additional

Published
2015
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5. Large-Area n-Type PERT Solar Cells Featuring Rear p+ Emitter Passivated by ALD Al2 O3

Author

Cornagliotti, Emanuele, Uruena, Angel, Aleman, Monica, Sharma, Aashish, Tous, Loic, Russell, Richard, Choulat, Patrick, Chen, Jia, John, Joachim, Haslinger, Michael, Duerinckx, Filip, Dielissen, Bas, Gortzen, Roger, Black, Lachlan, and Szlufcik, Jozef

Abstract

We present large-area n-type PERT solar cells featuring a rear boron emitter passivated by a stack of ALD Al2O3 and PECVD SiOx. After illustrating the technological and fundamental advantages of such a device architecture, we show that the Al2O3/SiOx stack employed to passivate the boron emitter is unaffected by the rear metallization processes and can suppress the Shockley-Read-Hall surface recombination current to values below 2 fA/cm2, provided that the Al2O3 thickness is larger than 7 nm. Efficiencies of 21.5% on 156-mm commercial-grade Cz-Si substrates are demonstrated in this study, when the rear Al2O3 /SiOx passivation is applied in combination with a homogeneous front-surface field (FSF). The passivation stack developed herein can sustain cell efficiencies in excess of 22% and Voc above 685 mV when a selective FSF is implemented, despite the absence of passivated contacts. Finally, we demonstrate that such cells do not suffer from light-induced degradation.

Published
2015
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