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Your search keyword '"Zhang, En Xia"' showing total 6 results
Start Over Author "Zhang, En Xia" Journal ieee electron device letters
6 results on '"Zhang, En Xia"'

1. Evaluating the Robustness of Complementary Channel Ferroelectric FETs Against Total Ionizing Dose Towards Radiation-Tolerant Embedded Nonvolatile Memory

Author

Jiang, Zhouhang, primary, Guo, Zixiang, additional, Luo, Xuyi, additional, Sayed, Munazza, additional, Faris, Zubair, additional, Mulaosmanovic, Halid, additional, Duenkel, Stefan, additional, Soss, Steven, additional, Beyer, Sven, additional, Gong, Xiao, additional, Kurinec, Santosh, additional, Narayanan, Vijaykrishnan, additional, Amrouch, Hussam, additional, Zhang, En Xia, additional, Fleetwood, Daniel M., additional, Schrimpf, Ronald D., additional, and Ni, Kai, additional

Published
2023
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2. Total-Ionizing-Dose Effects on 3D Sequentially Integrated, Fully Depleted Silicon-on-Insulator MOSFETs

Author

Toguchi, Shintaro, primary, Zhang, En Xia, additional, Gorchichko, Mariia, additional, Fleetwood, Daniel M., additional, Schrimpf, Ronald D., additional, Reed, Robert A., additional, Moreau, Stephane, additional, Cheramy, Severine, additional, Batude, Perrine, additional, Brunet, Laurent, additional, Andrieu, Francois, additional, and Alles, Michael L., additional

Published
2020
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5. Charge Trapping in Al2O3/ $\beta$ -Ga2O3-Based MOS Capacitors.

Author

Bhuiyan, Maruf A., Zhou, Hong, Jiang, Rong, Zhang, En Xia, Fleetwood, Daniel M., Ye, Peide D., and Ma, Tso-Ping

Subjects
DIELECTRIC devices, METAL oxide semiconductors, CAPACITORS
Abstract

Trapping characteristics of MOS structures with $\beta $ -Ga2O3 substrates and Al2O3 gate dielectrics are evaluated via constant-voltage stress and X-ray irradiation. Traps that affect bias-induced charging are located primarily in the Al2O3 dielectric layer, and are distributed broadly in time and/or energy. Stress-induced flatband voltage shifts are reduced by N2 annealing. Trap-assisted tunneling is shown to be responsible for the observed gate leakage. Hole trapping in the Al2O3 dielectric layer dominates device radiation response. The relatively modest radiation-induced charge trapping observed in these devices is promising for the potential future use of Al2O3/ $\beta $ -Ga2O3 devices in a space environment. [ABSTRACT FROM AUTHOR]

Published
2018
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