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We present a new methodology to estimate the lifetime of thin-film-transistor (TFT)-based scan driver circuit in display application with the dynamic time evolutionary aging model. The proposed method not only enables more accurate device level estimation but also circuit level aging prediction given that the TFTs are stressed dynamically. To properly handle threshold voltage shift ( $\Delta \text{V}_{\text {th}}$ ) of each TFTs in the scan driver under dynamic voltage stress patterns like the alternative voltage level and frequency, a time discretization strategy considering the voltage bias stress feedback is developed to be adaptable with SPICE transient simulation simply. The results show that $\Delta \text{V}_{\text {th}}$ of each TFTs in scan driver circuit can be evolved in real time accordingly under dynamic stress. What’s more, an exponential relationship between the aging parameter $\beta $ and the aging time is for the first time obtained, which has much importance for predicting lifetime of scan driver and other TFT-based circuit.

For the first time, in this letter, the anomalous positive bias stress instability of the back gated monolayer polycrystal molybdenum disulfide (MoS2) field-effect transistors with high-hydrogen-concentration SiO2 gate dielectrics is reported. It is found that the threshold voltage shifts exhibit a pronounced turnaround behavior from a positive shift to a negative shift when enlarging the stress voltage and stress time. We relate this anomalous positive bias instability to two physical processes, charge trapping and hydrogen release and migration.

In this letter, we demonstrate the coexistence of Schottky diode performance and resistance switching (RS) behavior based on TiN/amorphous indium-gallium-zinc oxide/Cu device. Depending on the reverse voltage applied to the Cu electrode, the device itself can be obviously switched from the diode mode to the RS mode. The device shows outstanding diode features with a large rectification ratio up to $ {3}\times {10}^{ {6}}$ at ±1 V and a high forward current density of 100 A/cm2 at +1 V. Furthermore, repeatable and stable switching behavior with low voltage has also been observed by increasing the reverse forming voltage. The physical model of Schottky barrier and conductive filament is proposed to explain the coexistence phenomenon. These achievements increase the application diversity of the metal–oxide film and provide a great potential application in active-matrix flat-panel displays.