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A novel gate driver circuit composed of four thin-film transistors (TFTs) and two capacitors is developed. Three-phase overlapping clock signals are used in multifunction input TFT and driving TFT, so the proposed circuit can have a simple structure. The electrical characteristics of a fabricated amorphous-indium–gallium–zinc-oxide TFT are measured to establish the model of HSPICE simulation. Simulated results confirm that the proposed gate driver circuit generates stable gate pulses according to the specification of a 5.46-in full high-definition panel and the single-stage layout area is 400 \mu m \times 126~\mu \textm . These specifications are favorable for high-resolution and narrow-bezel active-matrix liquid crystal displays. [ABSTRACT FROM AUTHOR]