1. ZnO-Based Low-Voltage Inverter With Quantum-Well-Structured Nanohybrid Dielectric
- Author
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Myung Mo Sung, Seongil Im, Byoung Hun Lee, Kimoon Lee, Min Suk Oh, Jeong Min Choi, and Sung Hoon Cha
- Subjects
Materials science ,business.industry ,Transistor ,High voltage ,Dielectric ,Electronic, Optical and Magnetic Materials ,law.invention ,Thin-film transistor ,law ,Electronic engineering ,Optoelectronics ,Inverter ,Electrical and Electronic Engineering ,business ,Low voltage ,Voltage converter ,Voltage - Abstract
We report on the fabrication of 2-V-operating ZnO-based inverter with two n-channel thin-film transistors (TFTs) on 22-nm-thin organic/inorganic nanohybrid dielectric, which contains AlOx/TiOx/AlOx in triple-layer structure. The inverter shows a high voltage gain of ~20 under the supply voltage (VDD) of 2 V but with a marginal transition voltage of 0.1 V (operation range of 0-2 V). To control the transition voltage to a more adequate value, an 8-V gate pulse was applied on driving ZnO-TFT so that some of the channel electrons would be tunneled through the AlOx-based barrier and trapped in the TiOx-based layer. Our inverter then displayed an optimum transition voltage of 0.75 V.
- Published
- 2008
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