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Your search keyword '"Rooyackers, R."' showing total 4 results
Start Over Author "Rooyackers, R." Journal ieee electron device letters
4 results on '"Rooyackers, R."'

1. A New Direction for III–V FETs for Mobile CPU Operation Including Burst-Mode: In0.35Ga0.65As Channel

Author

Rakshit, T., primary, Obradovic, B., additional, Wang, W.-E., additional, Kim, W.-H., additional, Shin, K.-M., additional, Baek, S.-C., additional, Lee, S.-W., additional, Kim, S.-H., additional, Lee, J.-M., additional, Kim, D., additional, Hoover, A., additional, Song, W.-B., additional, Cantoro, M., additional, Heo, Y.-C., additional, Rooyackers, R., additional, Ardila, S. C., additional, Vais, A., additional, Lin, D., additional, Collaert, N., additional, and Rodder, M. S., additional

Published
2017
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3. Performance improvement of tall triple gate devices with strained SiN layers

Author

Collaert, N., primary, De Keersgieter, A., additional, Anil, K.G., additional, Rooyackers, R., additional, Eneman, G., additional, Goodwin, M., additional, Eyckens, B., additional, Sleeckx, E., additional, de Marneffe, J.-F., additional, De Meyer, K., additional, Absil, P., additional, Jurczak, M., additional, and Biesemans, S., additional

Published
2005
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4. A Functional 41-Stage Ring Oscillator Using Scaled FinFET Devices With 25-nm Gate Lengths and 10-nm Fin Widths Applicable for the 45-nm CMOS Node.

Author

Collaert, N., Dixit, A., Goodwin, M., Anil, K.G., Rooyackers, R., Degroote, B., Leunissen, L.H.A., Veloso, A., Jonckheere, R., De Meyer, K., Jurczak, M., and Biesemans, S.

Subjects
ELECTRIC oscillators, FIELD-effect transistors, COMPLEMENTARY metal oxide semiconductors, TRANSISTORS, METAL oxide semiconductors, ELECTRONIC circuits
Abstract

In this letter, we have fabricated a functional FinFET ring oscillator with a physical gate length of 25 nm and a fin width of 10 nm, the smallest ever reported. We demonstrate that these narrow (Wfin = 10 nm) and tall (Hfin = 60-80 nm) fins can be reliably etched with controlled profiles and that they are required to keep the short-channel effects under control, resulting in drain. induced barrier leakage characteristics of 45 mV/V at Vdd = 1 V and Lg = 25 nm for the nFET. For these ultrathin (10 nm) fins, we have succeeded in properly setting the VT at 0.2 V without the use of metal gates. In addition to ring oscillators, we also have obtained excellent pFET FinFET devices at wider fin widths (Wfln = 65 nm) with Idsat = 380 µA/µm at Ioff = 60 nA/µm and Vdd = -1.2V. [ABSTRACT FROM AUTHOR]

Published
2004
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