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Organic Devices offer low-cost manufacturing and better flexibility, sustainability and solution-processability than their Si-based MOS counterparts, which make them suitable for new applications where those characteristics are an advantage. However, organic device performance is still far from that provided by CMOS technology and many issues are still unclear. In this work, a performance comparison is made between Interdigitated and Corbino geometries of Organic Thin Film Transistors (OTFT), with different areas but fabricated with identical stack materials and techniques. To this end, I-V characteristics and C-V curves of the OTFTs were measured and a Common-Source circuit was proposed and implemented for extracting relevant electrical parameters of the devices, through a standard small signal analysis. The parameter extraction methodology in the frequency domain proposed allows rapid testing of the device/circuit performance of this technology, which for the first time is applied to organic devices. Results show that despite the large voltages, organic transistors exhibit similar channel dimension dependencies to MOS devices and can be also described by the same small signal model. [ABSTRACT FROM AUTHOR]

Oxide semiconductors have the potential to increase the performance of inkjet printed microelectronic devices such as field-effect transistors (FETs), due to their high electron mobilities. Typical metal oxides are n-type semiconductors, while p-type oxides, although realizable, exhibit lower carrier mobilities. Therefore, the circuit design based on oxide semiconductors is mostly in n-type logic only. Here we present an inkjet printed pn-diode based on p- and n-type oxide semiconductors. Copper oxide or nickel oxide is used as p-type semiconductor whereas n-type semiconductor is realized with indium oxide. The measurements show that the pn-diodes operate in the voltage window typical for printed electronics and the emission coefficient is 1.505 and 2.199 for the copper oxide based and nickel oxide based pn-diode, respectively. Furthermore, a pn-diode model is developed and integrable into a circuit simulator. [ABSTRACT FROM AUTHOR]