1. A nonvolatile memory based on reversible phase changes between fcc and hcp
- Author
-
Taek Sung Lee, Hyuk-Soon Kwon, Inho Kim, Jeung-hyun Jeong, D. Ahn, Min-Ho Kwon, Ki-Bum Kim, Tae-Yeon Lee, Byung-ki Cheong, and Dae-Hwan Kang
- Subjects
Quenching ,Materials science ,Chalcogenide ,Alloy ,Metallurgy ,Analytical chemistry ,engineering.material ,Electronic, Optical and Magnetic Materials ,Amorphous solid ,Non-volatile memory ,chemistry.chemical_compound ,chemistry ,Metastability ,Phase (matter) ,engineering ,Electrical and Electronic Engineering ,Electrical conductor - Abstract
A nonvolatile memory technology utilizing reversible changes between fcc and hcp crystalline phases is proposed. In this new type of phase-change memory, data are stored in different forms of crystalline phases of (Ge/sub 1/Sb/sub 2/Te/sub 4/)/sub 0.8/(Sn/sub 1/Bi/sub 2/Te/sub 4/)/sub 0.2/ chalcogenide alloy. RESET operation produces the less conductive metastable fcc phase via melt-quenching from the more conductive stable hcp phase and SET operation involves a phase change from fcc directly to hcp. Both RESET and SET operations can be completed as fast as 70 ns with large changes in cell resistance.
- Published
- 2005
- Full Text
- View/download PDF