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A metal ion threshold switch (MITS) based on an Ag/TiN/HfO2/Pt stack is experimentally demonstrated with improved endurance. The incorporation of a low-temperature atomic layer deposition (ALD) TiN layer as an efficient diffusion barrier enables optimum Ag infiltration during the electroforming step. Further, the tunability of the threshold voltage (VTS) from 0.25 to 1.1V via bottom electrode (BE) work function engineering is demonstrated. The Ag/TiN/HfO2/Al MITS selector exhibits a 4.4x increase in VTS, $100~\mu \text{A}$ ON-current handling capability, low leakage (~10 pA), $10^{{7}}$ half-bias non-linearity and fast (

In this letter, the write disturb of Hf0.5Zr0.5O2-based 1T-FeFET nonvolatile AND memory array is experimentally investigated for ${V}_{W}$ /2 and ${V}_{W}$ /3 inhibition bias schemes to determine the worst-case memory sensing condition. Read margin analysis reveals that the increased leakage current in the low- ${V}_{\textsf {TH}}$ erased state and the increased read current of the high- ${V}_{\textsf {TH}}$ programmed state are the key factors that limit the maximum array size.

An oscillator-based true random number generator (TRNG) is experimentally demonstrated by exploiting inherently stochastic threshold switching in the insulator-to-metal transition (IMT) in vanadium dioxide. Through experimentation and modeling, we show that the origin of stochasticity arises from small perturbations in the nanoscale domain structure, which are then subsequently amplified through a positive feedback process. Within a 1T1R oscillator, the stochastic cycle-to-cycle variations in the IMT trigger voltage result in random timing jitter, which is harnessed for a TRNG. The randomness of the IMT TRNG output is validated using the NIST SP800-22 statistical test.