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In this letter, we demonstrate the coexistence of Schottky diode performance and resistance switching (RS) behavior based on TiN/amorphous indium-gallium-zinc oxide/Cu device. Depending on the reverse voltage applied to the Cu electrode, the device itself can be obviously switched from the diode mode to the RS mode. The device shows outstanding diode features with a large rectification ratio up to $ {3}\times {10}^{ {6}}$ at ±1 V and a high forward current density of 100 A/cm2 at +1 V. Furthermore, repeatable and stable switching behavior with low voltage has also been observed by increasing the reverse forming voltage. The physical model of Schottky barrier and conductive filament is proposed to explain the coexistence phenomenon. These achievements increase the application diversity of the metal–oxide film and provide a great potential application in active-matrix flat-panel displays. [ABSTRACT FROM AUTHOR]

In this letter, high-performance organic phototransistors and photoswitches based on an ultraclosely \pi-stacked organic semiconductor, i.e., titanyl phthalocyanine, are fabricated. The p-type transistor exhibited high performance with a hole mobility of \sim\!\4. 5\ \cm^2\cdot\V^-1\cdot \s^-1 and an on/off ratio higher than \3.1 \times \10^7. Phototransistors exhibited high-photoresponse properties with a responsivity at 10.5 A/W and a photosensitivity up to \2.7 \times \10^5. The high performance of the devices showed their potential application in optoelectronic organic integrated circuits. [ABSTRACT FROM PUBLISHER]

In this letter, an organic memory cell based on tris(8-hydroxyquinolinato)aluminum doped with gold nanoparticles is reported. The device can achieve good resistive switching properties, such as a high on/off current ratio of about \10^4, and good retention (4 h at 0.1 V). The device remains in either state even after the power has been turned off and shows a good stability under stress test. The current–voltage characteristics are comprehensively investigated, and a possible mechanism is proposed and well fitted with the experiment data. The results show that the organic memory devices have promising potentials for future flexible electronic systems. [ABSTRACT FROM AUTHOR]