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Your search keyword '"Lin, Shih-Kai"' showing total 6 results
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6 results on '"Lin, Shih-Kai"'

1. Performance Improvement by Enhancing Passivation Layer of p-Type GaN High-Electron Mobility Transistors With Supercritical Oxygen Treatment

Author

Chou, Sheng-Yao, primary, Wu, Pei-Yu, additional, Chen, Ming-Chen, additional, Chang, Ting-Chang, additional, Tsai, Xin-Ying, additional, Lin, Shih-Kai, additional, Kuo, Ting-Tzu, additional, Huang, Wei-Chen, additional, Tu, Hong-Yi, additional, Wu, Chung-Wei, additional, Tsai, Tsung-Ming, additional, and Huang, Jen-Wei, additional

Published
2023
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4. Gate Dielectric Leakage Reduction in Hard-Mask Defined and Dry-Etch Patterned Organic TFTs Devices.

Author

Chen, Jian-Jie, Chang, Ting-Chang, Hung, Yang-Hao, Zheng, Yu-Zhe, Kuo, Chuan-Wei, Lin, Shih-Kai, Wu, Pei-Yu, Tsai, Chia-Hung, and Ogier, Simon

Subjects
ORGANIC semiconductors, DIELECTRICS, INDIUM gallium zinc oxide, STRAY currents, THIN film transistors, LEAKAGE
Abstract

To control the parasitic conduction between devices, photolithography and dry etching of organic thin-film transistors (OTFTs), which utilize the gate metal as a hard-mask for organic semiconductor (OSC) patterning, are used. This study shows that the hard-mask patterning process results in a gate leakage current, which is attributed to the sidewall defects. The characteristic mechanisms of different leakage currents were studied to understand this behavior, including negative-bias temperature stress (NBTS) testing and measurements of devices with structural asymmetry. Additionally, an optimized structure design is proposed to suppress the leakage and increase the reliability of OTFTs. Such improvements are necessary for practical applications of OTFTs requiring small channel widths, such as displays and logic circuitry. [ABSTRACT FROM AUTHOR]

Published
2022
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5. The Effect of Humidity on Reducing Forming Voltage in Conductive-Bridge Random Access Memory With an Alloy Electrode

Author

Lin, Shih-Kai, primary, Chen, Min-Chen, additional, Chang, Ting-Chang, additional, Lien, Chen-Hsin, additional, Chang, Jing-Shuen, additional, Wu, Cheng-Hsien, additional, Tseng, Yi-Ting, additional, Xu, You-Lin, additional, Huang, Kai-Lin, additional, Sun, Li-Chuan, additional, Zhang, Yong-Ci, additional, Chiu, Yu-Ju, additional, and Sze, Simon M., additional

Published
2019
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6. Analyzing Electric Field Effect by Applying an Ultra-Short Time Pulse Condition in Hafnium Oxide-Based RRAM

Author

Wu, Cheng-Hsien, primary, Lin, Shih-Kai, additional, Pan, Chih-Hung, additional, Chen, Po-Hsun, additional, Lin, Wen-Yan, additional, Chang, Ting-Chang, additional, Tsai, Tsung-Ming, additional, Xu, You-Lin, additional, Shih, Chih-Cheng, additional, Lin, Yu-Shuo, additional, Chen, Wen-Chung, additional, Wang, Ming-Hui, additional, Zhang, Sheng-Dong, additional, and Sze, Simon M., additional

Published
2018
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