16 results on '"Jeon, Sanghun"'
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2. Ferroelectricity Enhancement in Hf0.5Zr0.5O2 Based Tri-Layer Capacitors at Low-Temperature (350 °C) Annealing Process
3. Insertion of Dielectric Interlayer: A New Approach to Enhance Energy Storage in HfₓZr1-xO₂ Capacitors
4. Effect of Forming Gas High-Pressure Annealing on Metal-Ferroelectric-Semiconductor Hafnia Ferroelectric Tunnel Junction
5. Improved Ferroelectric Switching in Sputtered HfZrOx Device Enabled by High Pressure Annealing
6. Demonstration of High Ferroelectricity (P$_{{r}}$ ~ 29 $\mu$ C/cm2) in Zr Rich HfxZr1–xO2 Films
7. Influence of High-Pressure Annealing on Memory Properties of Hf0.5Zr0.5O2 Based 1T-FeRAM
8. Unified Analytic Model for Current–Voltage Behavior in Amorphous Oxide Semiconductor TFTs
9. HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications
10. Influence of Fast Charging on Accuracy of Mobility in ${a}$ -InHfZnO Thin-Film Transistor
11. The Influence of Hydrogen on Defects of In–Ga–Zn–O Semiconductor Thin-Film Transistors With Atomic-Layer Deposition of Al2O3
12. Influence of Fast Charging on Accuracy of Mobility in a -InHfZnO Thin-Film Transistor.
13. In-Depth Study on the Effect of Active-Area Scale-Down of Solution-Processed $\hbox{TiO}_{x}$
14. Verification of Interface State Properties of a-InGaZnO Thin-Film Transistors With $\hbox{SiN}_{x}$ and $ \hbox{SiO}_{2}$ Gate Dielectrics by Low-Frequency Noise Measurements
15. Low-Frequency Noise Performance of a Bilayer InZnO–InGaZnO Thin-Film Transistor for Analog Device Applications
16. Verification of Interface State Properties of a-InGaZnO Thin-Film Transistors With \SiNx and \SiO2 Gate Dielectrics by Low-Frequency Noise Measurements.
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