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We systematically investigated the wafer- bonded interfaces of p+GaAs/n+InGaAs and p+InGaAs/ n+InGaAs by using a circular transmission line method (CTLM) for the increased extraction accuracy. Based on the low-temperature bonding process at 50 °C, the bonded interfaces were successfully fabricated without degradation of the material quality. While the fabricated devices exhibited the linearly increased resistance as a function of channel distances, the p+InGaAs/n+InGaAs structure revealed the improved interfacial resistivity of $3.9\times 10^{-3} \,\, \Omega \cdot \text{cm}^{2}$ compared with $3.3\!\times \!10^{-2} \,\, \Omega \cdot \text{cm}^{2}$ of the p+GaAs/n+InGaAs. Since these values suggested good electrical properties in wafer-bonded structures, the developed wafer-bonded interfaces could be a good approach for integrating electronic and optoelectronic devices.