1. Electrical TCAD Study of the Low-Voltage Avalanche-Mode Superjunction LED
- Author
-
H. de Vries, Raymond J. E. Hueting, S. Dutta, Anne-Johan Annema, MESA+ Institute, Integrated Devices and Systems, and Integrated Circuit Design
- Subjects
Materials science ,business.industry ,Doping ,silicon ,Light emitting diode ,Electroluminescence ,Avalanche breakdown ,Electronic, Optical and Magnetic Materials ,law.invention ,CMOS ,light-emitting diode (LED) ,law ,Power ,Optoelectronics ,Power semiconductor device ,Electrical and Electronic Engineering ,business ,Low voltage ,Diode ,Light-emitting diode - Abstract
The CMOS silicon avalanche-mode light-emitting diode (AMLED) has emerged as a potential light source for monolithic optical interconnects. Earlier we presented a superjunction light-emitting diode (SJLED) that offers a higher electroluminescent intensity compared to a conventional AMLED because of its more uniform field distribution. However, for reducing power consumption low-voltage (< 15V) SJLEDs are desired, not explored before. In this work we present a TCAD simulation feasibility study of the low-voltage SJLED for various doping concentrations and device dimensions. The results show that for obtaining a constant field, approximately a ten-fold more aggressive charge balance condition in the SJLED is estimated than traditionally reported. This is important for establishing a guideline to realize optimized RESURF and SJLEDs in the ever-shrinking advanced CMOS nodes.
- Published
- 2021