Search

In this letter, ultrathin gadolinium oxide (Gd2O3) high-k gate dielectrics with complementary-metal-oxide- semiconductor (CMOS)-compatible fully silicided nickel-silicide metal gate electrodes are reported for the first time. MOS capacitors with a Gd2O3 thickness of 3.1 nm yield a capacitance equivalent oxide thickness of CET = 0.86 rim. The extracted dielectric constant is k = 13-14. Leakage currents and equivalent oxide thicknesses of this novel gate stack meet the International Technology Roadmap for Semiconductors targets for the near term schedule and beyond. [ABSTRACT FROM AUTHOR]