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One-dimensional metal-oxide nanowire networks (NNs) are considered as important elements in electronics due to their unique physical and electrical performances. In this letter, Sn1-x Gax O NNs were fabricated and field-effect transistors (FETs) based on Sn1-x Gax O NNs with different Sn/Ga ratios were constructed. The characteristics of the FETs have been systematically investigated. In order to promote the adhesion and electrical performance of nanowires, Sn1-x Gax O NNs were welded by introducing the polymer mixture containing poly vinyl pyrrolidone and poly methyl methacrylate. Utilizing a welding process, the transport properties of Sn1-x Gax O NNs have been greatly promoted, and the FETs based on Sn0.8 Ga0.2 O NNs exhibit optimum electrical performance. Once integrated with high-k ZrOx dielectric, the FET based on Sn0.8 Ga0.2 O NNs/ZrOx exhibits high stability and high electrical performance, including $\text{a}\mu _{\text{FE}}$ of 5.2 cm2 /V s, an $\text{I}_{\text{on}} /\text{I}_{\text{off}}$ of $1.5\times 10 ^{6}$ , a subthreshold voltage of 170 mV/decade, an on voltage of −0.25 V, and a negligible hysteresis of ~0.12 V. The successful fabrication of the FETs based on Sn0.8 Ga0.2 O NNs lays the foundation for the development of low-consumption, low-cost and high-performance electronic devices.

Electrospinning technique is considered to be one of the most powerful approaches for the preparation of one-dimensional (1D) metal oxide nanofiber networks (NFNs). In this report, In2O3 NFNs were fabricated by electrospinning using polymethyl methacrylate (PMMA) as polymer and epoxy resin as additive. Benefiting from the excellent chemical properties of PMMA, In2O3 NFNs with impact stacking were prepared at a relatively low annealing temperature by a welding process. The welded In2O3 NFNs were characterized by various techniques and the electrical performance of the field-effect transistors (FETs) based on the welded In2O3 NFNs were systematically investigated. It is observed that the FET based on In2O3 NFNs annealed at 320 °C, with a nanofiber density of $0.4\,\,\mu \text{m}^{-{1}}$ exhibits high electrical performance, including an ${I}_{ {\mathrm{{ON}}}}/{I}_{ {\mathrm{{OFF}}}}$ of $\sim {5}\times {10}^{{7}}$ , a $\mu _{\text {FE}}$ of 1.27 cm2/V s, an on voltage of −8 V and a hysteresis of 5 V. A device array with ${4}\times {5}$ units was fabricated and tested, confirming the excellent reliability and reproducibility of the FET.

In this letter, high-performance thin-film transistors (TFTs), with indium oxide (In2O3) as front channel layer, high permittivity ZrO2 as dielectric layer, and aluminum oxide (Al2O3) as passivation layers were integrated by a fully solution process. It is found that the incorporation of Al2O3 passivation layer gives rise to a sharp decrease in the off current (Ioff) and a corresponding increase in the on/off current ratio ( $\text{I}_{\text {on}}$ /Ioff) of the TFTs, compared to that without Al2O3 passivation. Furthermore, the thickness effect of the passivation layer on the performance of In2O3 /ZrO2 TFTs has been investigated systematically. The In2O3 /ZrO2 TFTs with optimized Al2O3 passivation layers can be operated at 3 V with high performance, including a high field-effect mobility of 21.22 cm2 /V s, a large $\text{I}_{\text {on}}$ /I off of 107 and a negligible hysteresis (~0V). This work demonstrates an effective strategy for the construction of high performance TFTs by incorporating the passivation layer.