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Paper-basedpentacene organic thin-film transistors (OTFTs) with spin-coated gelatin (G) stacked gate dielectric layers, the Au/pentacene/G/G matrix-embedded iron (FeG)/Al/paper structure, were fabricated. The proposed composite-stacked bio-dielectric layer can be implemented using solutions with the degradable biomaterials. These materials enable a large-area printing of use-and-throw devices. Control devices (Au/pentacene/G/Al and Au/pentacene/FeG/Al structure) were also fabricated for comparison. High-performance paper-based OTFT constructed from the stacked gate dielectric layer exhibited a carrier mobility of 8 cm2/Vs, an ON/OFF current ratio of approximately 103, a subthreshold swing of 0.6 V/decade, and a threshold voltage of −1.4 V. These results are compatible to those OTFTs fabricated on other substrates. Therefore, the emerging biomaterial-based transistors on paper substrates may help in developing low-cost, environment-friendly devices. [ABSTRACT FROM AUTHOR]

Beeswax, a natural nontoxic biological material, is used as the gate dielectric of flexible low-voltage indium–zinc-oxide (IZO)-based homojunction thin-film transistors (TFTs) on paper substrates. A high specific capacitance of 5 \mu \textF /cm2 is measured at 1 Hz in the beeswax film due to the electric-double-layer effect. The current ON/OFF ratio, subthreshold swing, and field-effect mobility of the IZO-based TFTs on paper substrate are estimated to be 7.6\times 10 ^6 , 86 mV/decade, and 14.6 cm2 /Vs, respectively. In addition, our results demonstrate that the flexible oxide-based TFTs on paper substrate show a good stability after 3000 times bending and 30 days aging testing. Such flexible low-voltage oxide-based homojunction TFTs have potential applications in portable paper electronics. [ABSTRACT FROM PUBLISHER]