1. Structural lattice defects in silicon observed at111in by perturbed angular correlation
- Author
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Th. Wichert, H. Skudlik, G. Grübel, Manfred Deicher, and Ekkehard Recknagel
- Subjects
Nuclear and High Energy Physics ,Materials science ,Condensed matter physics ,Silicon ,Annealing (metallurgy) ,chemistry.chemical_element ,Trapping ,Condensed Matter Physics ,Atomic and Molecular Physics, and Optics ,chemistry ,Angular correlation ,Lattice defects ,Physical and Theoretical Chemistry ,Thin film - Abstract
Probing of structural defects in silicon by the perturbed γγ angular correlation (PAC) technique is demonstrated between 77 K and 1300 K. The behaviour of radioactive111 In probe atoms implanted at 295 K, is monitored during isochronal annealing in n-type, p-type and intrinsic Si. Trapping of defects, produced by the111In implantation itself or by postirradiation is studied in P-doped crystals (1016/cm3-1017/cm3).
- Published
- 1987
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