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This paper presents a review of the charge-transfer mechanisms in charge-transfer devices. Special attention is given to the similarity of the physics of the transfer processes that occur in integrated MOS bucket brigades, surface charge-coupled devices, and bulk charge-coupled devices. The results of theoretical analysis and experimental measurements are used to compare the performances expected from the mentioned devices. The comparison indicates that bulk chargecoupled devices are capable of the highest performance in terms of operating frequency and charge-transfer inefficiency at all possible levels of signal charge. [ABSTRACT FROM AUTHOR]

This paper gives the results of recent experiments on the electrical, magnetic, optical and structural properties of layer type crystals. It deals in particular with the layer type transition metal dichalcogenides, MX2, and representative members are ZrS2, NbSe2, MoS2. These materials have been the subject of fairly intense activity during the past few years. It is argued that in NbSe2, there is a relatively narrow "d" band based on overlap of dz2 orbitals on the Nb atoms lying in the plane of the sandwich, and that it is this band which is the basis of many of the interesting physical properties, Phenomena such as excitons, screening effects, conduction in narrow "d" bands, superconductivity and the metal-insulator transtion are all encountered. Interaction of the MX2 crystals with a variety of organic and inorganic molecules and atoms can lead to quite dramatic changes in the physical properties. Long chain organic amines inserted between the MX2 layers in the van der Waal's gap can separate the layers by large distances approaching 60 Å, and the intercalated crystals still remain superconductors. These experiments, together with those in which superconductivity is found in crystals of NbSe2 a until cell in thickness (c 12 Å), suggests we may be concerned with essentially two dimensional superconductivity, but this is still an open and controversial point. [ABSTRACT FROM AUTHOR]