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CHF3/Ar plasma was used to etch LiTaO3 crystal by inductively coupled plasma technology. The etched crystals under different process parameters were analyzed by surface profilometer and characterized by atomic force microscopy and scanning electron microscope. It was shown that ICP power, RIE power, and total gas flow rate had similar effects on etching rate and selectivity, while Ar/(Ar + CHF3) gas ratio had opposite effects on etching rate and selectivity, with better etching rate and selectivity at the ratio of 0.2. Our work gives a fundamental instruction for the fabrication of LiTaO3 based devices. [ABSTRACT FROM AUTHOR]

CHF3/Ar plasma was used to etch LiTaO3 crystal by inductively coupled plasmas technique. X-ray photoelectron spectroscopy was performed to investigate the etching mechanism. It was found that chemical reactions had occurred between the F plasma and the Li and Ta metal species, forming the corresponding fluorides. Some fluorides are nonvolatile, and remained on the surface during the etching period. In order to get higher etching rate, it is important to remove these metal fluorides. The combination of chemical reaction and sputtered etching was performed and could effectively remove the remaining residues. [ABSTRACT FROM AUTHOR]