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Start Over Author "Guo‐Bao Jiang" Journal ferroelectrics
2 results on '"Guo‐Bao Jiang"'

1. Preparation of ZrO2thin film for metal-ferroelectric-insulator-semiconductor (MFIS) FET's application

Author

Yin-Yin Lin, Guo-Bao Jiang, Ting-Ao Tang, and Wei-Ning Huang

Subjects
Materials science, business.industry, Biasing, Insulator (electricity), Dielectric, Condensed Matter Physics, Ferroelectricity, Electronic, Optical and Magnetic Materials, Crystallinity, Semiconductor, Optoelectronics, Thin film, business, Voltage
Abstract

ZrO2 thin film with suitable dielectric constant for MFIS FET's application was prepared by novel metal-organic-decomposition (MOD) method. The dielectric constants of the thin film laid between 10 and 30 and increased with the development of the crystallinity. The magnitude of the leakage current of the thin film with thickness of 27nm and 35nm was 1E-5 and 1E-7 A/cm2 respectively when 5V bias voltage was applied. The C-V characteristics show a memory window of 2.5V for a sweep voltage from -5V to +5V. It indicates that the thin film could satisfy the requirement of MFIS structure.

Published
2001

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