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Samarium modified SrBi4-xSmxTi4O15 (x = 0, 0.13, 0.43 and 0.78) ferroelectric ceramics of Aurivillius family were prepared by conventional solid state reaction method. X-ray diffraction studies confirm the formation of a single-phase. Microstructural images show randomly oriented palate-like structure. Broad dielectric peaks were found to obey the modified Curie-Weiss law. The overall inherent ferroelectric nature was explained on the basis of the Avrami model. Furthermore, with increasing the Sm3+ content, the grain morphology and diffusive parameters have shown a comprehending impact on the ferroelectric (hysteresis) behavior. [ABSTRACT FROM AUTHOR]

Bismuth layered structure ferroelectric materials of Aurivillius family have been attracted on account of their inherent-ferroelectric properties. Rare earth modified two layered compound, namely, Bi3TiNbO9has been found to be a relaxor ferroelectric material, and therefore much attention is being concentrated to enhance the dielectric properties with different modifications. In view of this, Sm-modified novel ceramic(Bi2SmTiNbO9) was prepared by the conventional solid-state reaction method. Impedance spectroscopic measurements were made as a function of frequency at different temperatures. Electrical studies were also made, and the results were corroborated to the Raman spectroscopic data. [ABSTRACT FROM AUTHOR]

Bismuth titanate (BT-‘Bi4Ti3O12’) is one of the extensively studied materials of the Bismuth layered structure ferroelectric (BLSF) family for its large spontaneous polarization along c-axis. In the present investigation, we have synthesised SmxBi4-xTi3O12(x = 0.37, 0.57, 0.72) ceramics using the conventional solid-state reaction method. The dielectric anomaly was observed near 450°C. Well-broad hysteresis loops were observed above room temperature up to 100°C. The coercive field (Ec) and consistent remanent polarization (Pr) values with temperature, compared to BT, indicates that the title compound has good promising ferroelectric-nature. This phenomenon is attributed to the easy recovery of defects (such as oxygen vacancies) accumulated at grain-interfaces, above room temperature, resulting in to well-hysteresis behaviour. The results were further confirmed with remanent polarization (2 Pr vs. temperature) plots. [ABSTRACT FROM AUTHOR]