1. Residual Stress Measurement of Single-Crystal SiC with Different Crystallographic Orientations.
- Author
-
Deng, Y., Zhou, Y., and Zhang, Y.
- Subjects
- *
RESIDUAL stresses , *HEXAGONAL crystal system , *MULTIPLE regression analysis , *SINGLE crystals , *SERVICE life , *SILICON carbide - Abstract
Background: Residual stress often generates during preparation, processing and use of silicon carbide (SiC) single crystal, which seriously affects the quality and service life of materials. Objective: This work aimed at evaluating the stress states in 6H-SiC single crystal wafers with different crystallographic orientations. Methods: The principle of determining the stress state of the hexagonal crystal system material through a multiple regression method was derived by modifying the related theory. Then the in-plane residual stress states of 6H-SiC samples grown along the [0001], 10 1 ¯ 0 and 11 2 ¯ 0 orientations were calculated, respectively. And the effect of the number of diffraction planes on the stress measurement results was studied. Finally, the stress results of SiC-6H materials grown in different crystallographic orientations were compared. Results: We found that the plane stress errors were gradually decreased with increase of the number of crystallographic planes, and were much lower than the ones estimated when the stress-free interplanar spacing was known; The residual stress states in single-crystal 6H-SiC of different crystallographic orientations were significantly different. Single-crystal 6H-SiC with 11 2 ¯ 0 growth direction had the smallest stress values, which was associated with the primary slip system {0001} ⟨ 11 2 ¯ 0 ⟩ . Conclusions: The improved methodology based on the multiple regression analysis can be applied to the stress measurement of single-crystal 6H-SiC. At least 6 planes should be used for stress detection to ensure the accuracy of residual stress results. Crystallographic orientation significantly influences the in-plane residual stress state in silicon carbide single crystal. [ABSTRACT FROM AUTHOR]
- Published
- 2022
- Full Text
- View/download PDF