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We report on highly efficient blue, orange, and white phosphorescent organic light emitting diodes (PHOLEDs) comprising of only two organic layers. Hole transporting 4,4’,4’’-tris(N-carbazolyl)triphenylamine (TcTa) and electron transporting 2-(diphenylphosphoryl) spirofluorene (SPPO1) were used as an emitting host for orange light-emitting bis(3-benzothiazol-2-yl-9-ethyl-9Hcarbazolato) (acetoacetonate) iridium ((btc)2(acac)Ir) and blue light-emitting iridium(III)bis(4,6-difluorophenylpyridinato-N,C2’) picolinate (FIrpic) dopant, respectively. Combining these two orange and blue light-emitting layers, we successfully demonstrated a highly efficient white PHOLEDs with maintaining Commission Internationale de L’Eclairage (CIE) coordinates of (x = 0.373, y = 0.443). Accordingly, we achieved a maximum external quantum, current, and power efficiencies of 12.9 %, 30.3 cd/A, and 30.0 lm/W without out-coupling enhancement.

We developed a highly refractive index planarization layer showing a very smooth surface for organic light-emitting diode (OLED) light extraction, and we successfully prepared a highly efficient white OLED device with an embossed nano-structure and highly refractive index planarization layers. White OLEDs act as an internal out-coupling layer. We used a spin-coating method and two types of TiO2 solutions for a planarization of the embossed nano-structure on a glass substrate. The first TiO2 solution was TiO2 sol, which consists of TiO2 colloidal particles in an acidic aqueous solution and several organic additives. The second solution was an organic and inorganic hybrid solution of TiO2. The surface roughness (Ra) and refractive index of the TiO2 planarization films on a flat glass were 0.4 nm and 2.0 at 550 nm, respectively. The J–V characteristics of the OLED including the embossed nano-structure and the TiO2 planarization film were almost the same as those of an OLED with a flat glass, and the luminous efficacy of the aforementioned OLED was enhanced by 34% compared to that of an OLED with a flat glass.

In this work, we develop a simulation method to predict a two-dimensional luminance distribution method using a circuitry simulation. Based on the simulation results, we successfully fabricate large area (90 mm × 90 mm) transparent organic light-emitting diode panels with high luminance uniformity.

We investigate the light-emitting performances of blue phosphorescent organic light-emitting diodes (PHOLEDs) with three different electron injection and transport materials, that is, bathocuproine(2,9-dimethyl-4,7diphenyl-1,10-phenanthroline) (Bphen), 1,3,5-tri(m-pyrid3-yl-phenyl)benzene (Tm3PyPB), and 2,6-bis(3-(carbazol9-yl)phenyl)pyridine (26DCzPPy), which are partially doped with cesium metal. We find that the device characteristics are very dependent on the nature of the introduced electron injection layer (EIL) and electron transporting layer (ETL). When the appropriate EIL and ETL are combined, the peak external quantum efficiency and peak power efficiency improve up to 20.7% and 45.6 lm/W, respectively. Moreover, this blue PHOLED even maintains high external quantum efficiency of 19.6% and 16.9% at a luminance of 1,000 cd/m 2 and 10,000 cd/m 2 , respectively.

We investigated the light-emitting performances of blue phosphorescent organic light-emitting diodes, known as PHOLEDs, by incorporating an N,N'-dicarbazolyl-3,5-benzen interlayer between the hole transporting layer and emitting layer (EML). We found that the effects of the introduced interlayer for triplet exciton confinement and hole/electron balance in the EML were exceptionally dependent on the host materials: 9-(4-tert-butylphenyl)-3,6-bis(triphenylsilyl)-9H-carbazole, 9-(4-tert-butylphenyl)-3,6-ditrityl-9H-carbazole, and 4,4'-bis-triphenylsilanyl-biphenyl. When an appropriate interlayer and host material were combined, the peak external quantum efficiency was greatly enhanced by over 21 times from 0.79% to 17.1%. Studies on the recombination zone using a series of host materials were also conducted.

Highly efficient white phosphorescent organic light- emitting diodes with a mixed-host structure are developed and the device characteristics are studied. The introduction of a hole-transport-type host (N, N'- dicarbazolyl-3-3-benzen (mCP)) into an electron- transport-type host (m-bis-(triphenylsilyl)benzene (UGH3)) as a mixed-host emissive layer effectively achieves higher current density and lower driving voltage. The peak external quantum and power efficiency with the mixed-host structure improve up to 18.9% and 40.9 lm/W, respectively. Moreover, this mixed-host structure device shows over 30% enhanced performance compared with a single-host structure device at a luminance of 10,000 cd/m 2 without any change in the electroluminescence spectra.

We have carried out the fabrications of a barrier layer on a polyethersulfon (PES) film and organic light emitting diode (OLED) based on a plastic substrate by means of atomic layer deposition (ALD). Simultaneous deposition of 30 nm AlOx film on both sides of the PES film gave a water vapor transition rate (WVTR) of 0.062 g/m 2 /day (@38°C, 100% R.H.). Further, the double layer of 200 nm SiNx film deposited by plasma enhanced chemical vapor deposition (PECVD) and 20 nm AlOx film by ALD resulted in a WVTR value lower than the detection limit of MOCON. We have investigated the OLED encapsulation performance of the double layer using the OLED structure of ITO / MTDATA (20 nm) / NPD (40 nm) / AlQ (60 nm) / LiF (1 nm) / Al (75 nm) on a plastic substrate. The preliminary life time to reach 91% of the initial luminance (1300 cd/m 2 ) was 260 hours for the OLED encapsulated with 100 nm of PECVD-deposited SiNx and 30 nm of ALD-deposited AlOx.

High quality indium tin oxide (ITO) thin films were grown by pulse laser deposition (PLD) on flexible polyethersulphone (PES) substrates. The electrical, optical, and surface morphological properties of these films were examined as a function of substrate temperature and oxygen pressure. ITO thin films, deposited by PLD on a PES substrate at room temperature and an oxygen pressure of 15 mTorr, have a low electrical resistivity of 2.9×10 - 4 Ω cm and a high optical transmittance of 84 % in the visible range. They were used as the anode in organic light-emitting diodes (OLEDs). The maximum electro luminescence (EL) and current density at 100 cd/m 2 were 2500 cd/m 2 and 2 mA/cm 2 , respectively, and the external quantum efficiency of the OLEDs was found to be 2.0 %.

This paper investigates the absorption and emission changes in poly(di-n-hexylfluorene)s. We prepared the poly(di-n-hexylfluorene)s end capped with 2-bromofluorene, 2-bromo-9,9-di-n-hexylfluorene, and 9-bromoanthracene through Ni (0) mediated polymerization. In addition, we also synthesized a structurally distorted copolymer of 2,7dibromo-9,9-di-n-hexylfluorene and 9,9-bis(4-bromophenyl) fluorene end capped with 2-bromofluorene through the same polymerization method. The absorption and emission changes of these polymers between before and after thermal annealing in a nitrogen atmosphere clarify the role of aggregate/excimer formation in poly(fluorene)s. The large absorption changes must be attributed to aggregate formation (ground state interaction), which causes only a slight red shift of the vibronically structured emission bands. We assign the additional long wavelength emission as an excimer band (excited state interaction), which is preferably formed at chain ends.

We report on the bias stability characteristics of transparent ZnO thin film transistors (TFTs) under visible light illumination. The transfer curve shows virtually no change under positive gate bias stress with light illumination, while it shows dramatic negative shifts under negative gate bias stress. The major mechanism of the bias stability under visible illumination of our ZnO TFTs is thought to be the charge trapping of photo-generated holes at the gate insulator and/or insulator/channel interface.