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We have developed a simple spin coating method to make high-quality nanoporous photoelectrodes of monoclinic BiVO4 and studied the ability of these electrodes to transport photogenerated carriers to oxidize sulfite and water. Samples containing molybdenum and featuring [001] out-of-plane crystallographic texture show a photocurrent and external quantum efficiency (EQE) for sulfite oxidation as high as 3.1 mA cm−2 and 60%, respectively, at 1.23 V versus reversible hydrogen electrode. By using an optical model of the electrode stack to accurately determine the fraction of electrode absorptance due to the BiVO4 active layer, we estimate that on average 70 ± 5% of all photogenerated carriers escape recombination. A comparison of internal quantum efficiency as a function of film processing, illumination direction, and film thickness shows that electron transport is efficient and hole transport limits the photocurrent (hole diffusion length 64% at 1.23 V. The electrodes quickly photocorrode during water oxidation but show good stability during sulfite oxidation and indefinite stability in the dark. By improving the hole transport efficiency and coating these nanoporous BiVO4 films with an appropriate protective layer and oxygen evolution catalyst, it should be possible to achieve highly efficient and stable water oxidation at a practical pH.

Numerical modeling of Hall effect data is used to demonstrate the existence of a conductive inversion layer at the surface of high-quality n-type single crystals of iron pyrite (cubic FeS2) grown by a flux technique. The presence of the inversion layer is corroborated by Hall measurements as a function of crystal thickness and photoemission spectroscopy. This hole-rich surface layer may explain both the low photovoltage of pyrite solar cells and the widely-observed high p-type conductivity of polycrystalline pyrite thin films that have together perplexed researchers for the past thirty years. We find that the thickness and conductivity of the inversion layer can be modified by mechanical and chemical treatments of the pyrite surface, suggesting that it may be possible to eliminate this hole-rich layer by passivating surface states and subsurface defects. Furthermore, modeling of the high-temperature electrical conductivity shows that the electronic band gap is 0.80 ± 0.05 eV at room temperature (compared to 0.94 eV according to optical transmission data), confirming that photovoltages of ∼500 mV should be attainable from pyrite under solar illumination.