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The lifetime of power electronic systems is the focus of both the academic and industrial worlds. Today, compact systems present high switching frequency and power dissipation density, causing high junction temperatures and strong thermal fluctuations that affect their performance and lifetime. This paper is a review of the existing techniques for the electro-thermal modelling of Mosfet and IGBT devices regarding lifetime estimation. The advantages and disadvantages of the methodologies used to achieve lifetime prediction are discussed, and their benefits are highlighted. All the factors required to predict power electronic device lifetime, including Mosfet and IGBT electrical models, the computation of power losses, thermal models, temperature measurement and management, lifetime models, mission profiles, cycle counting, and damage accumulation, are described and compared. [ABSTRACT FROM AUTHOR]

The introduction of distributed generation (DG) into distribution systems is expanding due to carbon neutral policies. DG with intermittent output characteristics brings frequent voltage variations in distribution systems. Generally, a step voltage regulator (SVR) is installed in the long distribution line and controls its voltage, which has limits of stable voltage regulations due to the slow tap-changing rate, switching losses, and short life span. To solve those problems, this paper proposes an IGBT-based SVR using zero-voltage switching. It is verified that the stable operation can be obtained through simulation by PSCAD/EMTDC 4.6 software and empirical experiments. [ABSTRACT FROM AUTHOR]

Based on extremely uneven temperature distribution along the insulated gate bipolar transistor (IGBT) chip vertical path during switching transients, a short-duration transient microsecond-scale prediction model applicable to multi-timescale simulation is presented in this paper. Traditional thermal models often take the chip active area as a uniform heat source to obtain a victual junction temperature (Tvj). In this paper, a discrete distributed heat source model combined with a thermal network model based on the sublayer division strategy is proposed to achieve an accurate temperature distribution description along the chip vertical path. Taking a 1700 V/3600 A IGBT module as an example, the proposed model can evaluate the short-duration transient temperature distribution along the chip vertical path and the error is less than 2 °C compared with the finite element model. Meanwhile, the model is applied to a single short-duration transient timescale and multi-timescale systems separately, and the simulation speed is increased by more than 80 times and 297 times, which verifies its validity and accuracy. [ABSTRACT FROM AUTHOR]

This paper presents an efficient and fast fault-tolerant control scheme for a bidirectional Z-source inverter (BiZSI)-fed induction-motor drive system for vehicular applications. The proposed strategy aims for the fault detection, localization and diagnosis of the proposed system during switch failures in the inverter module. Generally, power–semiconductor switch failures in inverter modules occur due to open- and short-circuit faults. An efficient modulation scheme is proposed and design specifications are thoroughly derived to obtain high voltage gains across the BiZSI network. A suitably fast detection and diagnosis scheme to isolate the faulty leg and resume the normal operation is discussed in this paper. The control scheme is provided such that the faulty leg is isolated and the motor phase is fed from a redundant leg to resume the operation. A feasible localization algorithm based on experimentally derived values and switching vectors is implemented. In addition, a fast fault diagnosis method based on current estimation and motor speed variation is designed and implemented. Moreover, the most important advantages of the proposed strategy include lower hardware requirements and less harmonic distortion in the output currents. Finally, the simulation and experimental results are presented to validate the feasibility of the theoretical analysis. An extensive performance evaluation of the proposed system with fault ride-through capabilities is performed to prove its suitability for vehicular applications. To validate its merits, the proposed strategy is compared with similar fault-tolerant schemes currently used in the industry. [ABSTRACT FROM AUTHOR]

This paper proposes a new compact electrothermal model of the Insulated Gate Bipolar Transistors (IGBT) dedicated for SPICE (Simulation Program with Integrated Circuit Emphasis). This model makes it possible to compute the non-isothermal DC characteristics of the considered transistor and the waveforms of terminal voltages and currents of the investigated device and its internal temperature at transients. This model takes into account the nonlinearity of thermal phenomena in this device. The form of the formulated model is described and the problem of estimating its parameter values is discussed. The correctness of the proposed model was verified experimentally both at DC operation and at transients. The obtained results are compared to the results of computations performed with the use of the classical literature model. A very good agreement between the results of measurements and computations performed with the new model is obtained at different cooling conditions and in a wide range of changes of parameters characterising the electrical excitation of the tested device. [ABSTRACT FROM AUTHOR]

In the design of modern power electronics converters, especially DC-DC converters, circuit-level computer simulations play an important role. This article analyses the accuracy of computations of the boost converter characteristics in the steady state using an electrothermal averaged model of a diode–transistor switch containing an Insulated Gate Bipolar Transistor (IGBT) and a rapid switching diode. This model has a form of a subcircuit for SPICE (Simulation Program with Integrated Circuit Emphasis). The influence of such factors as the switching frequency of the transistor, the duty cycle of the signal controlling the transistor, the input voltage, and the output current of the boost converter on the accuracy of computing the converter output voltage and junction temperature of the IGBT and the diode were analysed. The correctness of the computation results was verified experimentally. Based on the performed computations and measurements, the usefulness range of the model under consideration was determined, and a method of solving selected problems limiting the accuracy of computations of the characteristics of this converter was proposed. [ABSTRACT FROM AUTHOR]

This study proposes an electrothermal averaged model of the diode–transistor switch including insulated gate bipolar transistor (IGBT) and a rapid switching diode. The presented model has the form of subcircuits dedicated for simulation program with integrated circuit emphasis (SPICE) and it makes it possible to compute characteristics of DC–DC converters at the steady state considering self-heating phenomena, both in the diode and in IGBT. This kind of model allows computations of voltages, currents and internal temperatures of all used semiconductor devices at the steady state. The formulas used in this model are adequate for both: continuous conducting mode (CCM) and discontinuous conducting mode (DCM). Correctness of the proposed model is verified experimentally for a boost converter including IGBT. Good accuracy in modeling these converter characteristics is obtained. [ABSTRACT FROM AUTHOR]

In this article, a three-leg interleaved boost Power Factor Corrector (IBPFC) converter for energy-efficient LED lighting systems connected to the main grid was discussed. This IBPFC circuit presented features 60 kHz of commutation frequency and up to 3 kW of power rating. The controlled rectifier front-end boost PFC supplied a DC/DC converter to drive power LEDs suitable for street lighting or a lighting system for a stadium, etc. The IBPFC operated in continuous current mode (CCM). The ripple impact of the IBPFC converter was analyzed and a novel methodology of inductance design was presented. In the proposed design approach, the derivative calculation of the current ripple peak compared with the derivative of the input current was used to define a critical inductance value to ensure the CCM condition. Experimental validation was provided on a 3kW prototype. [ABSTRACT FROM AUTHOR]