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Start Over Author "Sang Choon Ko" Journal electronics letters (wiley-blackwell)
1 results on '"Sang Choon Ko"'

1. Low onset voltage of GaN on Si Schottky barrier diode using various recess depths.

Author

Youngrak Park, Jung-Jin Kim, Woojin Chang, Hyun-Gyu Jang, Jeho Na, Hyunsoo Lee, Chi-Hoon Jun, Ho-young Cha, Jae Kyoung Mun, Sang Choon Ko, and Eun Soo Nam

Subjects
SEMICONDUCTOR-metal boundaries, SCHOTTKY barrier, SCHOTTKY barrier diodes, METAL semiconductor field-effect transistors, FIELD-effect transistors
Abstract

A low onset voltage AlGaN/GaN diode with a width of 14 mm is achieved. The recess depth of the AlGaN layer is responsible for the low onset voltage. In comparison with the conventional non-recessed diode, the onset voltage reduces by 45% along with a decrease of reverse leakage current by about one order of magnitude. [ABSTRACT FROM AUTHOR]

Published
2014
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